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參數(shù)資料
| 型號(hào)： | PF08134B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場(chǎng)效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持 |
| 文件頁(yè)數(shù)： | 10/14頁(yè) |
| 文件大?。?/td> | 123K |
| 代理商： | PF08134B |
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PF08134B
Rev.1.01, May 13, 2004, page 10 of 13
DCS mode (1710 MHz to 1785 MHz)
(cont.)
–8
–6
–4
–2
0
2
4
6
8
DCS mode (1710 MHz) Pout vs. Pin (Temperature variation)
36
Input power Pin (dBm)
O
Vapc = 2.2 V
35
30
1600 1650 1700 1750 1800
32
31
33
34
1900
1850
1950 2000
DCS, PCS mode Pout, Eff vs. f
Frequency f (MHz)
O
60
35
40
45
50
55
E
Eff
Vdd = 3.5 V
Tc = 25
°
C
Pout : Vapc = 2.2 V
Eff : Pout = 32.5 dBm
10
0.01
0.1
1
–50–40 –30 –20 –10
10
0
20
30
40
DCS mode (1710 MHz) Idd vs. Pout
Output power Pout (dBm)
S
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
10
0.01
0.1
1
–50–40 –30 –20 –10
10
0
20
30
40
DCS mode (1785 MHz) Idd vs. Pout
Output power Pout (dBm)
S
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
37
36
32
33
34
35
O
DCS mode Pout vs. Vdd
3.1
Supply voltage Vdd (V)
3.3
3.5
3.7
3.9
4.1
4.3
4.5
Pin = 0 dBm
Vapc = 2.2 V
Tc = 25
°
C
36
31
32
33
35
34
31
32
33
35
34
–8
–6
–4
–2
0
2
4
6
8
DCS mode (1785 MHz) Pout vs. Pin (Temperature variation)
Input power Pin (dBm)
O
Vapc = 2.2 V
Pout
1785 MHz
1710 MHz
Vdd = 3.1 V, Tc = 85
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.5 V, Tc = 85
°
C
Vdd = 3.5 V, Tc = 25
°
C
Vdd = 3.1 V, Tc = 85
°
C
Vdd = 3.5 V, Tc = 25
°
C
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