參數(shù)資料
型號(hào): PF08134B
廠商: Renesas Technology Corp.
英文描述: MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
中文描述: 場(chǎng)效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持
文件頁數(shù): 2/14頁
文件大?。?/td> 123K
代理商: PF08134B
PF08134B
Rev.1.01, May 13, 2004, page 2 of 13
Absolute Maximum Ratings *
1
(Tc = 25°C)
Item
Symbol
Vdd
Rating
7.0
5.0
3.5
2
4
4
10
30 to +100
40 to +100
5
3
Unit
V
V
A
A
V
V
dBm
°C
°C
W
W
Remark
at no-operation
at operation (50
load)
Supply voltage
Idd
GSM
Idd
DCS
Vctl
Vapc
Pin
Tc (op)
Tstg
Pout
GSM
Pout
DCS
Supply current
Vctl voltage
Vapc voltage
Input power
Operating case temperature *
2
Storage temperature
Output power
Notes: 1. The maximum ratings shall be valid over both the GSM850-band (824 to 849 MHz),
and the DCS1800/1900-band (1710 to 1785 MHz, 1850 to 1910 MHz).
2. These are specified at pulsed operation with pulse width = 1154
μ
s and duty cycle of 2:8.
Electrical Characteristics for DC
(Tc = 25°C)
Item
Symbol
Ids
Min
Typ
Max
20
Unit
μ
A
Test Condition
Vdd = 4.7 V, Vapc = 0 V,
Vctl = 0.2 V
Vapc = 2.2 V
Vctl = 3 V
Drain cutoff current
Vapc control current
Vctl control current
Iapc
Ictl
2.0
2
mA
μ
A
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