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參數(shù)資料
| 型號(hào)： | PF08134B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場(chǎng)效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持 |
| 文件頁(yè)數(shù)： | 11/14頁(yè) |
| 文件大小： | 123K |
| 代理商： | PF08134B |
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PF08134B
Rev.1.01, May 13, 2004, page 11 of 13
PCS mode (1850 MHz to 1910 MHz)
40
30
20
10
–60
–40
–50
–20
–30
–10
0
O
40
30
20
10
–60
–40
–50
–20
–30
–10
0
100
90
0
10
20
40
30
60
50
80
70
100
90
0
10
20
40
30
60
50
80
70
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
PCS mode (1850 MHz) Pout, Eff vs. Vapc
2.2
0
Control voltage range Vapc (V)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
2
1.8
8
–8
–6
–4
–2
0
2
4
6
PCS mode (1850 MHz) Eff vs. Pout
35
0
5
10
15
20
25
30
Output power Pout (dBm)
60
0
10
20
30
40
50
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
PCS mode (1910 MHz) Eff vs. Pout
O
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Pout
Eff
PCS mode (1910 MHz) Pout, Eff vs. Vapc
2.2
0
Control voltage range Vapc (V)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
2
1.8
PCS mode (1850 MHz) Pout, Eff vs. Pin
Input power Pin (dBm)
O
37
32
33
34
36
35
60
35
40
45
50
55
E
Pout
8
–8
–6
–4
–2
0
2
4
6
Input power Pin (dBm)
O
37
32
33
34
36
35
60
35
40
45
50
55
E
Eff
Vdd = 3.5 V
Tc = 25
°
C
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
PCS mode (1910 MHz) Pout, Eff vs. Pin
Eff
Pout
35
0
5
10
15
20
25
30
Output power Pout (dBm)
60
0
10
20
30
40
50
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Eff
Pout
Pout : Vapc = 2.2 V
Eff : Pout = 32 dBm
Vdd = 3.5 V
Tc = 25
°
C
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