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參數(shù)資料
| 型號： | PF08134B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持 |
| 文件頁數(shù)： | 9/14頁 |
| 文件大?。?/td> | 123K |
| 代理商： | PF08134B |
PF08134B
Rev.1.01, May 13, 2004, page 9 of 13
DCS mode (1710 MHz to 1785 MHz)
Pout
Pout
40
30
20
–40
–50
–60
–20
–30
0
–10
10
O
40
30
20
–40
–50
–60
–20
–30
0
–10
10
100
90
0
10
20
40
30
60
50
80
70
100
90
0
10
20
40
30
60
50
80
70
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
DCS mode (1710 MHz) Pout, Eff vs. Vapc
2.2
0
Control voltage range Vapc (V)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
2
1.8
10
–10 –8 –6 –4
0
–2
2
4
6
8
10
–10 –8 –6 –4
0
–2
2
4
6
8
DCS mode (1710 MHz) Eff vs. Pout
35
0
5
10
15
20
25
30
Output power Pout (dBm)
60
0
10
20
30
40
50
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
DCS mode (1785 MHz) Eff vs. Pout
O
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Pout
Eff
DCS mode (1785 MHz) Pout, Eff vs. Vapc
2.2
0
Control voltage range Vapc (V)
0.2 0.4 0.6 0.8 1 1.2 1.4 1.6
2
1.8
DCS mode (1710 MHz) Pout, Eff vs. Pin
Input power Pin (dBm)
O34.5
32.0
32.5
33.0
34.0
33.5
60
35
40
45
50
55
E
Vdd = 3.5 V
Tc = 25
°
C
Pout : Vapc = 2.2 V
Eff : Pout = 32.5 dBm
Input power Pin (dBm)
O34.5
32.0
32.5
33.0
34.0
33.5
60
35
40
45
50
55
E
Eff
Vdd = 3.5 V
Tc = 25
°
C
Pout : Vapc = 2.2 V
Eff : Pout = 32.5 dBm
DCS mode (1785 MHz) Pout, Eff vs. Pin
Eff
Pout
35
0
5
10
15
20
25
30
Output power Pout (dBm)
60
0
10
20
30
40
50
E
Pin = 0 dBm
Vdd = 3.5 V
Vapc = control
Tc = 25
°
C
Eff
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