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參數資料
| 型號： | PF08134B |
| 廠商： | Renesas Technology Corp. |
| 英文描述： | MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone |
| 中文描述： | 場效應晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持 |
| 文件頁數： | 5/14頁 |
| 文件大小： | 123K |
| 代理商： | PF08134B |
PF08134B
Rev.1.01, May 13, 2004, page 5 of 13
Electrical Characteristics for DCS1900 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 1850 to 1910 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 0 V, Rg = Rl = 50
, Tc = 25
°
C,
Pulse operation with pulse width 1154
μ
s and duty cycle 2:8 shall be used.
Item
Symbol
Min
Typ
—
—
Max
1910
0.1
Unit
MHz
V
Test Condition
Frequency range
Band select (DCS active)
f
Vctl
1850
0
Input power
Control voltage range
Pin
Vapc
–2
0.2
—
—
2
dBm
V
2.2
Supply voltage
Total efficiency
Vdd
η
T
2nd H.D.
3rd H.D.
3.1
40
3.5
47
4.5
—
V
%
Pout
DCS
= 32.0 dBm,
Vapc controlled
2nd harmonic distortion
3rd harmonic distortion
—
—
–15
–3
dBm
dBm
–8
–3
4th~8th harmonic distortion
Input VSWR
4th~8th H.D.
VSWR (in)
—
—
—
1.5
–3
3
dBm
—
Output power (1)
Output power (2)
Pout (1)
Pout (2)
32.0
30.5
33.0
31.5
—
—
dBm
dBm
Vapc = 2.2 V
Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C
Idd at Low power
Isolation
—
—
—
—
—
–42
150
–37
mA
dBm
μ
s
—
Pout
DCS
= 5 dBm
Vapc = 0.2 V
Switching time
Stability
t
r
, t
f
—
—
1
2
Pout
DCS
= 0 to 32.0 dBm
Vdd = 3.1 to 4.5 V, Pout
DCS
≤
32.0 dBm,
Vapc
DCS
≤
2.2 V, Rg = 50
,
Output VSWR = 6 : 1 All phase angles
Vdd = 3.1 to 4.5 V, Pout
DCS
≤
32.0 dBm,
Vapc
DCS
≤
2.2 V, Rg = 50
, t = 20 sec.,
Output VSWR = 10 : 1 All phase angles
Vdd = 3.1 to 4.2 V, Pout
DCS
≤
32.0 dBm,
Vapc
DCS
≤
2.2 V, Rg = 50
, t = 20 sec.,
Tc
≤
90°C,
Output VSWR = 10 : 1 All phase angles
No parasitic oscillation
< –36 dBm
Load VSWR tolerance
—
No degradation
or
Permanent degradation
No degradation
or
Permanent degradation
—
Load VSWR tolerance
at GPRS CLASS 12
operation
—
—
Slope Pout/Vapc
AM output
—
—
—
—
160
15
200
20
dB/V
%
Pout
DCS
= 0 to 32.0 dBm
Pout
DCS
= 0 to 32.0 dBm,
4% AM modulation at input
50 kHz modulation frequency
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