參數(shù)資料
型號: PF08134B
廠商: Renesas Technology Corp.
英文描述: MOS FET Power Amplifier Module for GSM850 and DCS1800/1900 Triple Band Handy Phone
中文描述: 場效應(yīng)晶體管功率放大器模塊電話為GSM850和DCS1800/1900三頻手持
文件頁數(shù): 3/14頁
文件大小: 123K
代理商: PF08134B
PF08134B
Rev.1.01, May 13, 2004, page 3 of 13
Electrical Characteristics for GSM850 band
(Tc = 25°C)
Test conditions unless otherwise noted:
f = 824 to 849 MHz, Vdd1 = Vdd2 = 3.5 V, Pin = 0 dBm, Vctl = 2.0 V, Rg = Rl = 50
, Tc = 25
°
C,
Pulse operation with pulse width 1154
μ
s and duty cycle 2:8 shall be used.
Item
Symbol
Min
824
2.0
Typ
Max
849
2.8
Unit
MHz
V
Test Condition
Frequency range
Band select (GSM active)
f
Vctl
Input power
Control voltage range
Pin
Vapc
–2
0.2
2
dBm
V
2.2
Supply voltage
Total efficiency
Vdd
η
T
2nd H.D.
3rd H.D.
3.1
40
3.5
47
4.5
V
%
Pout
GSM
= 33.5 dBm,
Vapc controlled
2nd harmonic distortion
3rd harmonic distortion
–10.5
–2.5
dBm
dBm
–16.5
–2.5
4th~8th harmonic distortion
Input VSWR
4th~8th H.D.
VSWR (in)
1.5
–2.5
3
dBm
Output power (1)
Output power (2)
Pout (1)
Pout (2)
33.5
32.0
34.0
32.5
dBm
dBm
Vapc = 2.2 V
Vdd = 3.1 V, Vapc = 2.2 V, Tc = +85°C
Idd at Low power
Isolation
–48
300
–37
mA
dBm
Pout
GSM
= 7 dBm
Vapc = 0.2 V
Isolation at
DCS RF-output
when GSM is active
Switching time
–25
–18
dBm
Pout
GSM
= 33.5 dBm,
Measured at f = 1648 to 1698 MHz
t
r
, t
f
1
2
μ
s
Pout
GSM
= 5 to 33.5 dBm
Vdd = 3.1 to 4.5 V, Pout
GSM
33.5 dBm,
Vapc
GSM
2.2 V, Rg = 50
,
Output VSWR = 6 : 1 All phase angles
Vdd = 3.1 to 4.5 V, Pout
GSM
33.5 dBm,
Vapc
GSM
2.2 V, Rg = 50
, t = 20 sec.,
Output VSWR = 10 : 1 All phase angles
Vdd = 3.1 to 4.2 V, Pout
GSM
33.5 dBm,
Vapc
GSM
2.2 V, Rg = 50
, t = 20 sec.,
Tc
90°C,
Output VSWR = 10 : 1 All phase angles
Pout
GSM
= 5 to 33.5 dBm
Pout
GSM
= 5 to 33.5 dBm,
4% AM modulation at input
50 kHz modulation frequency
Stability
No parasitic oscillation
< –36 dBm
Load VSWR tolerance
No degradation
or
Permanent degradation
Load VSWR tolerance
at GPRS CLASS 12
operation
No degradation
or
Permanent degradation
Slope Pout/Vapc
160
200
dB/V
AM output
15
20
%
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