參數(shù)資料
型號(hào)： PH1955L
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
中文描述： 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝： PLASTIC, LFPAK-4
文件頁數(shù)： 2/12頁
文件大?。?/td> 77K
代理商： PH1955L
PH1955L_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
2 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
3.
Ordering information
4.
Limiting values
[1]
Duty cycle is limited by the maximum junction temperature.
[2]
Repetitive avalanche failure is not determined simply by thermal effects. Repetitive avalanche transients should only be applied for short
bursts, not every switching cycle.
Table 2:
Type number
Ordering information
Package
Name
LFPAK
Description
plastic single-ended surface mounted package; 4 leads
Version
SOT669
PH1955L
Table 3:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage
V
DGR
drain-gate voltage (DC)
V
GS
gate-source voltage
I
D
drain current
Limiting values
Conditions
25
°
C
≤
T
j
≤
175
°
C
25
°
C
≤
T
j
≤
175
°
C; R
GS
= 20 k
Min
-
-
-
-
-
-
-
55
55
Max
55
55
±
15
40
28
160
75
+175
+175
Unit
V
V
V
A
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 5 V; see
Figure 2
and
3
T
mb
= 100
°
C; V
GS
= 5 V; see
Figure 2
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s; see
Figure 3
T
mb
= 25
°
C; see
Figure 1
I
DM
P
tot
T
stg
T
j
Source-drain diode
I
S
source current
I
SM
peak source current
Avalanche ruggedness
E
DS(AL)S
non-repetitive drain-source
avalanche energy
peak drain current
total power dissipation
storage temperature
junction temperature
T
mb
= 25
°
C
T
mb
= 25
°
C; pulsed; t
p
≤
10
μ
s
-
-
40
160
A
A
unclamped inductive load; I
D
= 40 A;
t
p
= 0.06 ms; V
DD
≤
55 V; R
GS
= 50
;
V
GS
= 10 V; starting at T
j
= 25
°
C
unclamped inductive load; I
D
= 4 A;
t
p
= 0.06 ms; V
DD
≤
55 V; R
GS
= 50
;
V
GS
= 10 V
-
80
mJ
E
DS(AL)R
repetitive drain-source avalanche
energy
[1]
[2]
-
0.8
mJ
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