參數資料
型號: PH1955L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
中文描述: 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁數: 6/12頁
文件大?。?/td> 77K
代理商: PH1955L
PH1955L_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
6 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
T
j
= 25
°
C
Output characteristics: drain current as a
function of drain-source voltage; typical values
T
j
= 25
°
C
Drain-source on-state resistance as a function
of gate-source voltage; typical values
Fig 5.
Fig 6.
T
j
= 25
°
C
Fig 7.
Drain-source on-state resistance as a function
of drain current; typical values
Fig 8.
Normalized drain-source on-state resistance
factor as a function of junction temperature
0
20
40
60
80
100
I
D
(A)
0
2
4
V
DS
(V)
003aaa644
3
2.8
V
GS
(V) = 10
5
4.5
4
3.8
3.2
3.4
3.6
1
3
10
15
20
25
2
4
6
8
10
12
V
GS
(V)
R
DSon
(m
)
003aaa645
003aaa646
10
17
24
31
38
45
0
20
40
60
80
100
I
D
(A)
R
DSon
(m
)
V
GS
(V) =
3.6
3.8
4
10
4.5
5
3.2 3.4
03ac63
0
1
2
3
-60
0
60
120
180
T
j
(
°
C)
a
a
R
DSon 25 C
°
)
-----------------------------
=
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PH1955L,115 功能描述:MOSFET N-CH TRENCH 55V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS(導通):0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube
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PH1-CJ-P 制造商:Panduit Corp 功能描述:
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PH1D17-110-G B 6.0;18.0;3.0-L 制造商:Alpha 3 Manufacturing 功能描述: