參數(shù)資料
型號(hào)： PH1955L
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
中文描述： 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝： PLASTIC, LFPAK-4
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 77K
代理商： PH1955L
PH1955L_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
5 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
6.
Characteristics
Table 5:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown
voltage
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 250
μ
A; V
GS
= 0 V
T
j
= 25
°
C
T
j
=
55
°
C
I
D
= 1 mA; V
DS
= V
GS
; see
Figure 9
and
10
T
j
= 25
°
C
T
j
= 175
°
C
T
j
=
55
°
C
V
DS
= 55 V; V
GS
= 0 V
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
=
±
15 V; V
DS
= 0 V
V
GS
= 5 V; I
D
= 25 A; see
Figure 6
and
8
T
j
= 25
°
C
T
j
= 175
°
C
V
GS
= 4.5 V; I
D
= 25 A; see
Figure 6
and
8
V
GS
= 10 V; I
D
= 25 A; see
Figure 6
and
8
55
50
-
-
-
-
V
V
V
GS(th)
gate-source threshold voltage
1
0.5
-
1.5
-
-
2
-
2.3
V
V
V
I
DSS
drain leakage current
-
-
-
0.02
-
2
1
500
100
μ
A
μ
A
nA
I
GSS
R
DSon
gate leakage current
drain-source on-state
resistance
-
-
-
-
16.3
-
-
14.3
19
40
21
17.3
m
m
m
m
Dynamic characteristics
Q
G(tot)
total gate charge
Q
GS
gate-source charge
Q
GD
gate-drain charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain diode
V
SD
source-drain voltage
t
rr
reverse recovery time
Q
r
recovered charge
I
D
= 25 A; V
DD
= 44 V; V
GS
= 5 V; see
Figure 11
-
-
-
-
-
-
-
-
-
-
18
5
8
1494
217
86
18
180
44
134
-
-
-
1992
260
118
-
-
-
-
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 25 V; f = 1 MHz; see
Figure 14
V
DS
= 30 V; R
L
= 1.2
; V
GS
= 5 V; R
G
= 10
I
S
= 25 A; V
GS
= 0 V; see
Figure 13
I
S
= 20 A; dI
S
/dt =
100 A/
μ
s; V
GS
= 0 V;
V
R
= 30 V
-
-
-
0.85
52
38
1.2
-
-
V
ns
nC
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