參數(shù)資料
型號: PH1955L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
中文描述: 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁數(shù): 3/12頁
文件大?。?/td> 77K
代理商: PH1955L
PH1955L_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
3 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
Fig 1.
Normalized total power dissipation as a
function of mounting base temperature
Fig 2.
Normalized continuous drain current as a
function of mounting base temperature
T
mb
= 25
°
C; I
DM
is single pulse
Safe operating area; continuous and peak drain currents as a function of drain-source voltage
Fig 3.
03aa16
0
40
80
120
0
50
100
150
200
T
mb
(
°
C)
P
der
(%)
03aa24
0
40
80
120
0
50
100
150
200
T
mb
(
°
C)
I
der
(%)
P
der
P
tot 25
C
°
)
------------------------
100
%
×
=
I
der
I
D 25 C
)
--------------------
100
%
×
=
003aaa642
1
10
10
2
10
3
1
10
1
0
2
I
D
(A)
DC
100 ms
10 ms
1 ms
100
μ
s
Limit R
DSon
= V
DS
/ I
D
V
DS
(V)
t
p
= 10
μ
s
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