參數(shù)資料
型號: PH1955L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
中文描述: 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁數(shù): 7/12頁
文件大?。?/td> 77K
代理商: PH1955L
PH1955L_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
7 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
I
D
= 1 mA; V
DS
= V
GS
Gate-source threshold voltage as a function of
junction temperature
T
j
= 25
°
C; V
DS
= 5 V
Fig 10. Sub-threshold drain current as a function of
gate-source voltage
Fig 9.
I
D
= 25 A; V
DD
= 14 V and 44 V
Fig 11. Gate-source voltage as a function of gate
charge; typical values
T
j
= 25
°
C and 175
°
C; V
DS
> I
D
×
R
DSon
Fig 12. Transfer characteristics: drain current as a
function of gate-source voltage; typical values
03aa33
0
0.5
1
1.5
2
2.5
-60
0
60
120
180
T
j
(
°
C)
V
GS(th)
(V)
max
typ
min
03aa36
10
-6
10
-5
10
-4
10
-3
10
-2
10
-1
I
D
(A)
0
1
2
3
V
GS
(V)
max
typ
min
003aaa649
0
1
2
3
4
5
0
5
10
15
20
Q
G
(nC)
V
GS
(V)
V
DD
= 14 V
V
DD
= 44 V
0
20
40
60
0
1
2
3
4
V
GS
(V)
I
D
003aaa648
T
j
= 175
°
C
25
°
C
(A)
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