參數(shù)資料
型號(hào): PH1955L
廠商: NXP SEMICONDUCTORS
元件分類: JFETs
英文描述: Logic level N-channel enhancement mode Field-Effect Transistor (FET) in a plastic package using TrenchMOS technology.
中文描述: 40 A, 55 V, 0.021 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-4
文件頁數(shù): 4/12頁
文件大?。?/td> 77K
代理商: PH1955L
PH1955L_1
Koninklijke Philips Electronics N.V. 2005. All rights reserved.
Product data sheet
Rev. 01 — 15 August 2005
4 of 12
Philips Semiconductors
PH1955L
N-channel TrenchMOS logic level FET
5.
Thermal characteristics
Table 4:
Symbol
R
th(j-mb)
Thermal characteristics
Parameter
thermal resistance from junction to mounting base see
Figure 4
Conditions
Min
-
Typ
-
Max
2
Unit
K/W
Fig 4.
Transient thermal impedance from junction to mounting base as a function of pulse duration
003aaa643
single pulse
0.2
0.1
0.05
0.02
10
-2
10
-1
1
10
10
-5
10
-4
10
-3
10
-2
10
-1
1
t
p
(s)
Z
th(j-mb)
(K/W)
δ
= 0.5
t
p
t
p
T
T
P
t
δ
=
10
-6
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