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參數(shù)資料
| 型號(hào)： | PH8230 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類(lèi)： | JFETs |
| 英文描述： | N-channel enhancement mode field-effect transistor |
| 中文描述： | 30 A, 30 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235 |
| 封裝： | PLASTIC, LFPAK-5 |
| 文件頁(yè)數(shù)： | 12/12頁(yè) |
| 文件大?。?/td> | 214K |
| 代理商： | PH8230 |
Koninklijke Philips Electronics N.V. 2003.
Printed in The Netherlands
All rights are reserved. Reproduction in whole or in part is prohibited without the prior
written consent of the copyright owner.
The information presented in this document does not form part of any quotation or
contract, is believed to be accurate and reliable and may be changed without notice. No
liability will be accepted by the publisher for any consequence of its use. Publication
thereof does not convey nor imply any license under patent- or other industrial or
intellectual property rights.
Date of release: 23 June 2003
Document order number: 9397 750 11118
Contents
Philips Semiconductors
PH8230
N-channel enhancement mode field-effect transistor
1
1.1
1.2
1.3
1.4
2
3
4
4.1
5
6
7
8
9
10
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Description . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 1
Pinning information. . . . . . . . . . . . . . . . . . . . . . 1
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 2
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Transient thermal impedance . . . . . . . . . . . . . . 4
Characteristics. . . . . . . . . . . . . . . . . . . . . . . . . . 5
Package outline . . . . . . . . . . . . . . . . . . . . . . . . . 9
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 10
Data sheet status. . . . . . . . . . . . . . . . . . . . . . . 11
Definitions . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . . 11
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| PH8230E | 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:TrenchMOS (tm) enhanced logic level FET |
| PH8230E T/R | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 30V 67A 5-Pin(4+Tab) LFPAK T/R |
| PH8230E,115 | 功能描述:MOSFET N-CH TRENCH 30V RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PH8230E | 制造商:NXP Semiconductors 功能描述:MOSFET N 30V LFPAK 制造商:NXP Semiconductors 功能描述:MOSFET, N, 30V, LFPAK |
| PH-8365-115-135-035 | 制造商:WASHERS 功能描述: |
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