參數(shù)資料
型號(hào)： PH8230
廠商： NXP SEMICONDUCTORS
元件分類： JFETs
英文描述： N-channel enhancement mode field-effect transistor
中文描述： 30 A, 30 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝： PLASTIC, LFPAK-5
文件頁(yè)數(shù)： 5/12頁(yè)
文件大?。?/td> 214K
代理商： PH8230
Philips Semiconductors
PH8230
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 23 June 2003
5 of 12
9397 750 11118
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
5.
Characteristics
Table 4:
T
j
= 25
°
C unless otherwise specified.
Symbol Parameter
Static characteristics
V
(BR)DSS
drain-source breakdown voltage
V
GS(th)
gate-source threshold voltage
I
DSS
drain-source leakage current
I
GSS
gate-source leakage current
R
DSon
drain-source on-state resistance
Characteristics
Conditions
Min
Typ
Max
Unit
I
D
= 10 mA; V
GS
= 0 V
I
D
= 1 mA; V
DS
= V
GS
V
DS
= 30 V; V
GS
= 0 V; T
j
= 25
°
C
V
GS
=
±
16 V; V
DS
= 0 V
V
GS
= 10 V; I
D
= 15 A
V
GS
= 4.5 V; I
D
= 15 A
30
1
-
-
-
-
-
1.75
0.06
0.9
6.3
10.5
-
2.5
1
10
8.2
15.3
V
V
μ
A
μ
A
m
μ
Dynamic characteristics
g
fs
forward transconductance
Q
g(tot)
total gate charge
Q
gs
gate-source charge
Q
gd
gate-drain (Miller) charge
C
iss
input capacitance
C
oss
output capacitance
C
rss
reverse transfer capacitance
t
d(on)
turn-on delay time
t
r
rise time
t
d(off)
turn-off delay time
t
f
fall time
Source-drain (reverse) diode
V
SD
source-drain (diode forward) voltage I
S
= 30 A; V
GS
= 0 V
t
rr
reverse recovery time
V
DS
= 10 V; I
D
= 15 A
I
D
= 30 A; V
DD
= 10 V; V
GS
= 10 V
27
-
-
-
-
-
-
-
-
-
-
45
22
5
5
1500 -
400
220
15
55
48
11
-
-
-
-
S
nC
nC
nC
pF
pF
pF
ns
ns
ns
ns
V
GS
= 0 V; V
DS
= 10 V; f = 1 MHz
-
-
-
-
-
-
V
DD
= 10 V; I
D
= 15 A; V
GS
= 10 V; R
G
= 4.7
-
-
0.85
60
1.11
-
V
ns
I
S
= 30 A; dI
S
/dt =
50 A/
μ
s; V
GS
= 0 V
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