參數(shù)資料
型號(hào): PH8230
廠商: NXP SEMICONDUCTORS
元件分類(lèi): JFETs
英文描述: N-channel enhancement mode field-effect transistor
中文描述: 30 A, 30 V, 0.0082 ohm, N-CHANNEL, Si, POWER, MOSFET, MO-235
封裝: PLASTIC, LFPAK-5
文件頁(yè)數(shù): 2/12頁(yè)
文件大?。?/td> 214K
代理商: PH8230
Philips Semiconductors
PH8230
N-channel enhancement mode field-effect transistor
Product data
Rev. 01 — 23 June 2003
2 of 12
9397 750 11118
Koninklijke Philips Electronics N.V. 2003. All rights reserved.
3.
Limiting values
Table 2:
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol Parameter
V
DS
drain-source voltage (DC)
V
GS
gate-source voltage (DC)
I
D
drain current (DC)
I
DM
peak drain current
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
Source-drain diode
I
S
source (diode forward) current (DC)
I
SM
peak source (diode forward) current T
mb
= 25
°
C; pulsed; t
p
10
μ
s
Limiting values
Conditions
T
j
= 25 to 150
°
C
Min
-
-
-
-
-
55
55
Max
30
±
20
30
120
50
+150
+150
Unit
V
V
A
A
W
°
C
°
C
T
mb
= 25
°
C; V
GS
= 10 V
T
mb
= 25
°
C; pulsed; t
p
10
μ
s
T
mb
= 25
°
C
T
mb
= 25
°
C
-
-
30
120
A
A
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