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參數(shù)資料
| 型號： | PHB55N03 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | TrenchMOS晶體管標(biāo)準(zhǔn)電平場效應(yīng)管 |
| 文件頁數(shù)： | 4/11頁 |
| 文件大?。?/td> | 117K |
| 代理商： | PHB55N03 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
Fig.5. Typical output characteristics, T
j
= 25 C
.
I
D
= f(V
DS
); parameter V
GS
Fig.6. Typical on-state resistance, T
j
= 25 C
.
R
DS(ON)
= f(I
D
); parameter V
GS
Fig.7. Typical transfer characteristics.
I
D
= f(V
GS
)
; conditions: V
DS
= 25 V; parameter T
j
Fig.8. Typical transconductance, T
= 25 C
.
g
fs
= f(I
D
); conditions: V
DS
= 25 V
Fig.9. Normalised drain-source on-state resistance.
a = R
DS(ON)
/R
DS(ON)25 C
= f(T
j
)
Fig.10. Gate threshold voltage.
V
GS(TO)
= f(T
j
); conditions: I
D
= 1 mA; V
DS
= V
GS
0
5
10
15
20
25
30
35
40
45
50
0
0.2
0.4
0.6
0.8
1
1.2
1.4
1.6
1.8
2
Drain-Source Voltage, VDS (V)
Drain Current, ID (A)
2.2 V
2.4 V
Tj = 25 C
VGS = 10 V
2 V
2.6 V
4.5 V
2.8 V
3 V
5 V
0
5
10
15
20
25
30
0
5
10
15
20
25
30
35
40
Drain current, ID (A)
Transconductance, gfs (S)
Tj = 25 C
175 C
VDS > ID X RDS(ON)
0
0.01
0.02
0.03
0.04
0.05
0.06
0.07
0.08
0.09
0.1
0
5
10
15
25
30
35
40
45
50
Drai20
Drain-Source On Resistance, RDS(on) (Ohms)
VGS =4.5 V
10V
Tj = 25 C
2.8V
3 V
2.6 V
2.2 V
2.4 V
5 V
Normalised On-state Resistance
0
0.1
0.2
0.3
0.4
0.5
0.6
0.7
0.8
0.9
1
1.1
1.2
1.3
1.4
1.5
1.6
1.7
1.8
1.9
2
-60
-40
-20
0
20
40
60
80
100
120
140
160
180
Junction temperature, Tj (C)
0
5
10
15
20
25
30
35
40
0
0.5
1
1.5
2
2.5
3
3.5
4
4.5
5
Gate-source voltage, VGS (V)
Drain current, ID (A)
VDS > ID X RDS(ON)
Tj = 25 C
175 C
Threshold Voltage, VGS(TO) (V)
0
0.25
0.5
0.75
1
1.25
1.5
1.75
2
2.25
-60
-40
-20
0
20
Junction Temperature, Tj (C)
40
60
80
100
120
140
160
180
typical
maximum
minimum
January 2001
4
Rev 1.000
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| PHB55N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHB55N03LTA | 制造商:NXP Semiconductors 功能描述:55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| PHB55N03LTA,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導(dǎo)通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風(fēng)格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB55N03LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | SOT-404 |
| PHB55N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
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