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參數(shù)資料
| 型號： | PHB55N03 |
| 廠商： | NXP Semiconductors N.V. |
| 英文描述： | TrenchMOS transistor Standard level FET |
| 中文描述： | TrenchMOS晶體管標準電平場效應管 |
| 文件頁數(shù)： | 9/11頁 |
| 文件大小： | 117K |
| 代理商： | PHB55N03 |
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
MECHANICAL DATA
Fig.18. SOT428 surface mounting package. Centre pin connected to mounting base.
Notes
1. This product is supplied in anti-static packaging. The gate-source input must be protected against static
discharge during transport or handling.
2. Refer to SMD Footprint Design and Soldering Guidelines, Data Handbook SC18.
3. Epoxy meets UL94 V0 at 1/8".
REFERENCES
OUTLINE
VERSION
EUROPEAN
PROJECTION
ISSUE DATE
IEC
JEDEC
JEITA
SOT428
TO-252
SC-63
99-09-13
01-12-11
0
10
20 mm
scale
Plastic single-ended surface mounted package (Philips version of D-PAK); 3 leads
(one lead cropped)
SOT428
E
b2
E1
w
A
M
b
c
b1
L1
L
1
3
2
D
D1
HE
L2
Note
1. Measured from heatsink back to lead.
e1
e
A
A2
A
A1
y
seating plane
mounting
base
A1
(1)
D
b
E1
E
HE
w
y
max.
A2
b2
b1
c
D1
min.
e
e1
L1
min.
L2
L
A
UNIT
DIMENSIONS (mm are the original dimensions)
0.2
0.2
mm
2.38
2.22
0.65
0.45
0.93
0.73
0.89
0.71
1.1
0.9
5.46
5.26
0.4
0.2
6.22
5.98
4.81
4.45
2.285
4.57
10.4
9.6
0.5
0.9
0.5
6.73
6.47
4.0
2.95
2.55
January 2001
9
Rev 1.000
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相關代理商/技術參數(shù) |
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|---|---|
| PHB55N03LT | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:N-channel TrenchMOS transistor Logic level FET |
| PHB55N03LTA | 制造商:NXP Semiconductors 功能描述:55 A, 25 V, 0.018 ohm, N-CHANNEL, Si, POWER, MOSFET |
| PHB55N03LTA,118 | 功能描述:MOSFET TAPE13 PWR-MOS RoHS:否 制造商:STMicroelectronics 晶體管極性:N-Channel 汲極/源極擊穿電壓:650 V 閘/源擊穿電壓:25 V 漏極連續(xù)電流:130 A 電阻汲極/源極 RDS（導通）:0.014 Ohms 配置:Single 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:Max247 封裝:Tube |
| PHB55N03LTT/R | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 30V V(BR)DSS | 55A I(D) | SOT-404 |
| PHB55N03T | 制造商:PHILIPS 制造商全稱:NXP Semiconductors 功能描述:TrenchMOS transistor Standard level FET |
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