參數(shù)資料
型號： PHB55N04LT
元件分類： 基準電壓源/電流源
英文描述： RADIATION HARDENED HIGH EFFICIENCY, 5 AMP SWITCHING REGULATORS
中文描述： 抗輻射高效，5安培開關(guān)穩(wěn)壓器
文件頁數(shù)： 2/11頁
文件大?。?/td> 117K
代理商： PHB55N04LT
Philips Semiconductors
Product specification
N-channel TrenchMOS
transistor
Logic level FET
PHP55N04LT, PHB55N04LT
PHD55N04LT
THERMAL RESISTANCES
SYMBOL PARAMETER
R
th j-mb
Thermal resistance junction
to mounting base
R
th j-a
Thermal resistance junction
to ambient
CONDITIONS
MIN.
-
TYP. MAX. UNIT
-
1.45
K/W
SOT78 package, in free air
SOT404 and SOT428 packages, pcb
mounted, minimum footprint
-
-
60
50
-
-
K/W
K/W
AVALANCHE LIMITING VALUE
SYMBOL PARAMETER
W
DSS
Drain-source non-repetitive
unclamped inductive turn-off
energy
CONDITIONS
I
D
= 25 A; V
DD
≤
15 V;
V
GS
= 5 V; R
GS
= 50
; T
mb
= 25 C
MIN.
-
MAX.
60
UNIT
mJ
ELECTRICAL CHARACTERISTICS
T
j
= 25C unless otherwise specified
SYMBOL PARAMETER
V
(BR)DSS
Drain-source breakdown
voltage
V
GS(TO)
Gate threshold voltage
CONDITIONS
V
GS
= 0 V; I
D
= 0.25 mA;
MIN.
35
32
1
0.5
-
-
-
-
-
10
-
-
-
-
-
-
-
-
-
-
-
-
TYP. MAX. UNIT
-
-
-
-
1.5
2
-
-
-
2.3
11
14
14
16
15
18
-
34
28
-
10
100
0.05
10
-
500
20
-
8
-
9
-
7
15
56
80
57
80
38
50
3.5
-
4.5
-
V
V
V
V
V
T
j
= -55C
V
DS
= V
GS
; I
D
= 1 mA
T
j
= 175C
T
j
= -55C
R
DS(ON)
Drain-source on-state
resistance
V
GS
= 10 V; I
D
= 25 A
V
GS
= 10 V; I
= 25 A (SOT428 package)
V
GS
= 5 V; I
D
= 25 A
V
GS
= 5 V; I
D
= 25 A; T
j
= 175C
V
DS
= 25 V; I
D
= 25 A
m
m
m
m
S
nA
μ
A
μ
A
nC
nC
nC
ns
ns
ns
ns
nH
nH
g
fs
I
GSS
I
DSS
Forward transconductance
Gate source leakage current V
GS
=
±
5 V; V
DS
= 0 V
Zero gate voltage drain
current
Total gate charge
Gate-source charge
Gate-drain (Miller) charge
Turn-on delay time
Turn-on rise time
Turn-off delay time
Turn-off fall time
Internal drain inductance
Internal drain inductance
V
DS
= 25 V; V
GS
= 0 V;
T
j
= 175C
Q
g(tot)
Q
gs
Q
gd
t
d on
t
r
t
d off
t
f
L
d
L
d
I
D
= 55 A; V
DD
= 15 V; V
GS
= 5 V
V
DD
= 15 V; I
D
= 25 A;
V
= 10 V; R
G
= 5
Resistive load
Measured tab to centre of die
Measured from drain lead to centre of die
(SOT78 package only)
Measured from source lead to source
bond pad
V
GS
= 0 V; V
DS
= 20 V; f = 1 MHz
L
s
Internal source inductance
-
7.5
-
nH
C
iss
C
oss
C
rss
Input capacitance
Output capacitance
Feedback capacitance
-
-
-
1230
354
254
-
-
-
pF
pF
pF
January 2001
2
Rev 1.000
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