PowerPC 750CX RISC Microprocessor Datasheet
November 13, 2000
Version 1.1
Page 11
4.0 General Parameters
The following list provides a summary of the general parameters of the PowerPC 750CX.
Technology
0.18
μ
m CMOS Copper technology, six-layer metallization
Die Size
42.7 sq. mm
Transistor count
20 million - including L2 cache
Logic design
Fully-static
Package
Surface mount 256-lead plastic ball grid array (PBGA)
27x27mm
Core power supply
1.8V
±
5%
I/O power supply
1.8V
±
5%
2.5V
±
5%
5.0 Electrical and Thermal Characteristics
This section provides both AC and DC electrical specifications and thermal characteristics for the PowerPC 750CX.
5.1
DC Electrical Characteristics
The tables in this section describe the PowerPC 750CX RISC Microprocessor’s DC electrical characteristics. Table 1
provides the absolute maximum ratings.
Table 1: Absolute Maximum Ratings
Characteristic
Symbol
Value (BVSEL = 0)
Value (BVSEL = 1)
Unit
Core supply voltage
V
DD
-0.3 to 2.0
-.03 to 2.00
V
PLL supply voltage
AV
DD
-0.3 to 2.0
-0.3 to 2.00
V
60X bus supply voltage
OV
DD
-0.3 to 2.0
-0.3 to 2.75
V
Input voltage
V
IN
-0.3 to 2.0
-0.3 to 2.75
V
Storage temperature range
T
STG
-55 to 150
-55 to 150
°
C
Note:
1. Functional and tested operating conditions are given in Table 2, “Recommended Operating Conditions” on page 12. Absolute maximum ratings are
stress ratings only, and functional operation at the maximums is not guaranteed. Stresses beyond those listed above may affect device reliability or
cause permanent damage to the device.
2. Caution: V
IN
must not exceed OV
DD
by more than 0.6V at any time, including during power-on reset.
3. Caution: OV
DD
must not exceed V
DD
/AV
DD
by more than 2.0V, except for up to 20ms during power on/off reset.
4. Caution: V
DD
/AV
DD
must not exceed OV
DD
by more than 1.2V, except for up to 20ms during power up/down.
5. Caution: AV
DD
must not exceed V
DD
by more than 1.2V, except for up to 20ms during power up/down reset.