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參數(shù)資料
| 型號： | SCM69C233 |
| 廠商： | Motorola, Inc. |
| 英文描述： | 4K x 64 Content Addressable Memory(4K x 64內(nèi)容可尋址存儲器) |
| 中文描述： | 4K的× 64內(nèi)容可尋址存儲器（4K的× 64內(nèi)容可尋址存儲器） |
| 文件頁數(shù)： | 4/22頁 |
| 文件大?。?/td> | 167K |
| 代理商： | SCM69C233 |
MCM69C233
SCM69C233
4
MOTOROLA FAST SRAM
ABSOLUTE MAXIMUM RATINGS
(See Note 1)
Rating
Symbol
Value
Unit
Supply Voltage (see Note 2)
VDD
Vin
Iout
PD
Tbias
4.6
V
Voltage Relative to VSS (see Note 2)
Output Current per Pin
–0.5 to VDD + 3 V
±
20
V
mA
Package Power Dissipation (see Note 3)
—
W
Temperature Under Bias (see Note 3)
Commercial
Industrial
–10 to 85
–40 to 85
°
C
Operating Temperature (see Note 4)
Commercial
Industrial
TA
0 to 70
–40 to 85
°
C
Storage Temperature
Tstg
–55 to 125
°
C
NOTES:
1. Permanent device damage may occur if ABSOLUTE MAXIMUM RATINGS are
exceeded. Functional operation should be restricted to RECOMMENDED OPER-
ATING CONDITIONS. Exposure to higher than recommended voltages for extended
periods of time could affect device reliability.
2. All voltages are referenced to VSS.
3. Power dissipation capability will be dependent upon package characteristics and use
environment. See Package Thermal Characteristics.
4. Consult Junction to Ambient Thermal Characteristics table for details and conditions.
DC OPERATING CONDITIONS AND CHARACTERISTICS
(VDD = 3.3 V
±
5%, TJ < 120
°
C, Unless Otherwise Noted)
RECOMMENDED OPERATING CONDITIONS
(Voltages Referenced to VSS = 0 V)
Parameter
Symbol
Min
Typ
Max
Unit
Power Supply Voltage
VDD
TJ
VIL
VIH
3.1
3.3
3.5
V
Operating Temperature (Junction)
—
—
120
°
C
Input Low Voltage
–0.5*
0
0.8
V
Input High Voltage
2.0
3
5.5
V
* VIL (min) = –3.0 V ac (pulse width
20 ns).
DC CHARACTERISTICS AND SUPPLY CURRENTS
Parameter
Symbol
Min
Max
Unit
Active Power Supply Current
IDDA
Ilkg(I)
Ilkg(O)
VOL
VOH
—
200
mA
Input Leakage Current (0 V
Vin
Vin
VDD)
VDD)
—
±
1
μ
A
Output Leakage Current (0 V
—
±
1
μ
A
Output Low Voltage (IOL = 8 mA)
Output High Voltage (IOH = –4 mA)
—
0.4
V
2.4
—
V
PACKAGE THERMAL CHARACTERISTICS
Rating
Symbol
Max
Unit
Thermal Resistance Junction to Ambient (200 lfpm, 4 Layer Board) (Note 2)
R
θ
JA
R
θ
JB
R
θ
JC
27.1
°
C/W
Thermal Resistance Junction to Board (Bottom) (Note 3)
17
°
C/W
Thermal Resistance Junction to Case (Top) (Note 4)
9
°
C/W
NOTES:
1. RAM junction temperature is a function of on–chip power dissipation, package thermal impedance, mounting site temperature, and
mounting site thermal impedance.
2. Per SEMI G38–87.
3. Indicates the average thermal impedance between the die and the mounting surface.
4. Indicates the average thermal impedance between the die and the case top surface. Measured via the cold plate method (MIL SPEC–883
Method 1012.1).
This device contains circuitry to protect the
inputs against damage due to high static volt-
ages or electric fields; however, it is advised
that normal precautions be taken to avoid appli-
cation of any voltage higher than maximum
rated voltages to this high–impedance circuit.
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