參數(shù)資料
型號: SKP02N60
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述: 快速IGBT在不擴散核武器條約與軟,恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁數(shù): 12/13頁
文件大?。?/td> 397K
代理商: SKP02N60
SKP02N60
SKB02N60
12
Jul-02
Figure A. Definition of switching times
Figure B. Definition of switching losses
I
r r m
90%
I
r r m
10%
I
r r m
di
/dt
r r
di /dt
t
r r
I
F
i,v
t
Q
S
Q
F
t
S
t
F
V
R
Q =Q
Q
S
F
+
t =t
t
S
F
+
Figure C. Definition of diodes
switching characteristics
p(t)
1
2
n
T (t)
τ
1
r
1
τ
2
r
2
n
n
τ
r
T
C
r
r
r
Figure D. Thermal equivalent
circuit
Figure E. Dynamic test circuit
Leakage inductance
L
σ
=180nH
and Stray capacity
C
σ
=180pF.
相關(guān)PDF資料
PDF描述
SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
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