參數(shù)資料
型號： SKP02N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述： 快速IGBT在不擴散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁數(shù)： 9/13頁
文件大?。?/td> 397K
代理商： SKP02N60
SKP02N60
SKB02N60
9
Jul-02
t
r
,
R
20A/
μ
s
60A/
μ
s
100A/
μ
s 140A/
μ
s 180A/
μ
s
0ns
100ns
200ns
300ns
400ns
500ns
I
F
= 1A
I
F
= 2A
I
F
= 4A
Q
r
,
R
20A/
μ
s
60A/
μ
s
100A/
μ
s 140A/
μ
s 180A/
μ
s
0nC
40nC
80nC
120nC
160nC
200nC
240nC
280nC
I
F
= 1A
I
F
= 2A
I
F
= 4A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
I
r
,
R
20A/
μ
s
60A/
μ
s
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
100A/
μ
s
140A/
μ
s
180A/
μ
s
0A
1A
2A
3A
4A
5A
I
F
= 1A
I
F
= 4A
I
F
= 2A
d
r
/
,
D
O
20A/
μ
s
60A/
μ
s
100A/
μ
s
140A/
μ
s
180A/
μ
s
0A/
μ
s
50A/
μ
s
100A/
μ
s
150A/
μ
s
200A/
μ
s
250A/
μ
s
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 200V,
T
j
= 125
°
C,
Dynamic test circuit in Figure E)
相關(guān)PDF資料
PDF描述
SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SLA24C01-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SKP02N60XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO220-3
SKP04N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKP04N60 制造商:Infineon Technologies AG 功能描述:IGBT FAST
SKP04N60XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 9.4A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 9.4A 50W TO220-3
SKP06N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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