參數(shù)資料
型號: SKP02N60
廠商: INFINEON TECHNOLOGIES AG
英文描述: Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述: 快速IGBT在不擴(kuò)散核武器條約與軟,恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁數(shù): 5/13頁
文件大?。?/td> 397K
代理商: SKP02N60
SKP02N60
SKB02N60
5
Jul-02
I
C
,
C
0V
1V
2V
3V
4V
5V
0A
1A
2A
3A
4A
5A
6A
7A
15V
13V
11V
9V
7V
5V
V
GE
=20V
I
C
,
C
0V
1V
2V
3V
4V
5V
0A
1A
2A
3A
4A
5A
6A
7A
15V
13V
11V
9V
7V
5V
V
GE
=20V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(
T
j
= 25
°
C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(
T
j
= 150
°
C)
I
C
,
C
0V
2V
4V
6V
8V
10V
0A
1A
2A
3A
4A
5A
6A
7A
8A
-55°C
+150°C
T
j
=+25°C
V
C
,
C
-
E
-50°C
0°C
50°C
100°C
150°C
1.0V
1.5V
2.0V
2.5V
3.0V
3.5V
4.0V
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(
V
CE
= 10V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
I
C
= 2A
I
C
= 4A
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