參數(shù)資料
型號： SKP02N60
廠商： INFINEON TECHNOLOGIES AG
英文描述： Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
中文描述： 快速IGBT在不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù)
文件頁數(shù)： 6/13頁
文件大小： 397K
代理商： SKP02N60
SKP02N60
SKB02N60
6
Jul-02
t
,
S
0A
1A
2A
3A
4A
5A
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
t
,
S
0
100
200
300
400
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
I
C
,
COLLECTOR CURRENT
Figure 9. Typical switching times as a
function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
R
G
= 118
,
Dynamic test circuit in Figure E)
R
G
,
GATE RESISTOR
Figure 10. Typical switching times as a
function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 2A,
Dynamic test circuit in Figure E)
t
,
S
0°C
50°C
100°C
150°C
10ns
100ns
t
r
t
d(on)
t
f
t
d(off)
V
G
,
G
-
E
-50°C
0°C
50°C
100°C
150°C
2.0V
2.5V
3.0V
3.5V
4.0V
4.5V
5.0V
5.5V
typ.
min.
max.
T
j
,
JUNCTION TEMPERATURE
Figure 11. Typical switching times as a
function of junction temperature
(inductive load,
V
CE
= 400V,
V
GE
= 0/+15V,
I
C
= 2A,
R
G
= 118
,
Dynamic test circuit in Figure E)
T
j
,
JUNCTION TEMPERATURE
Figure 12. Gate-emitter threshold voltage
as a function of junction temperature
(
I
C
= 0.15mA)
相關(guān)PDF資料
PDF描述
SKP02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKB02N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SKW07N120 Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode
SLA24C01-D The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
SLA24C01-S The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
SKP02N60XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 6A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 6A 30W TO220-3
SKP04N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 4A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
SKP04N60 制造商:Infineon Technologies AG 功能描述:IGBT FAST
SKP04N60XKSA1 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 600V 9.4A 3-Pin(3+Tab) TO-220AB 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 600V 9.4A 50W TO220-3
SKP06N60 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 6A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube
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