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參數(shù)資料
| 型號(hào)： | SKW07N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù) |
| 文件頁(yè)數(shù)： | 3/13頁(yè) |
| 文件大?。?/td> | 413K |
| 代理商： | SKW07N120 |
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SKW07N120
Power Semiconductors
3
Jul-02
Switching Characteristic, Inductive Load,
at
T
j
=25
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
27
29
440
21
0.6
0.4
1.0
35
38
570
27
0.8
0.55
1.35
ns
T
j
=25
°
C,
V
CC
=800V,
I
C
=8A,
V
GE
=15V/0V,
R
G
=47
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=40pF
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
60
0.3
ns
Diode reverse recovery charge
μ
C
A
A/
μ
s
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
-
-
9
T
j
=25
°
C,
V
R
=800V,
I
F
=8A,
di
F
/dt
=400A/
μ
s
400
Switching Characteristic, Inductive Load,
at
T
j
=150
°
C
Value
typ.
Parameter
Symbol
Conditions
min.
max.
Unit
IGBT Characteristic
Turn-on delay time
Rise time
Turn-off delay time
Fall time
Turn-on energy
Turn-off energy
Total switching energy
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
-
-
-
-
-
-
-
30
26
490
30
1.0
0.7
1.7
36
31
590
36
1.2
0.9
2.1
ns
T
j
=150
°
C
V
CC
=800V,
I
C
=8A,
V
GE
=15V/0V,
R
G
=47
,
L
σ
C
σ
Energy losses include
“tail” and diode
reverse recovery.
1)
=180nH,
1)
=40pF
mJ
Anti-Parallel Diode Characteristic
Diode reverse recovery time
t
rr
t
S
t
F
Q
rr
I
rrm
di
rr
/dt
-
-
-
-
170
1.1
ns
Diode reverse recovery charge
μ
C
A
A/
μ
s
Diode peak reverse recovery current
Diode peak rate of fall of reverse
recovery current during
t
F
-
-
15
110
T
j
=150
°
C
V
R
=800V,
I
F
=8A,
di
F
/dt
=500A/
μ
s
1)
Leakage inductance L
σ
and stray capacity C
σ
due to dynamic test circuit in figure E.
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKW07N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW07N120E8161 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW07N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO247 |
| SKW1000 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ANTIPARALLEL THYRISTORS WITH NON-ISOLATED WATER FLOW |
| SKW10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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