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參數(shù)資料
| 型號： | SKW07N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù) |
| 文件頁數(shù)： | 9/13頁 |
| 文件大小： | 413K |
| 代理商： | SKW07N120 |
SKW07N120
Power Semiconductors
9
Jul-02
t
r
,
R
200A/
μ
s
400A/
μ
s
600A/
μ
s
800A/
μ
s
0ns
50ns
100ns
150ns
200ns
250ns
300ns
350ns
I
F
=3.5A
I
F
=7A
Q
r
,
R
200A/
μ
s
400A/
μ
s
600A/
μ
s
800A/
μ
s
0.00μC
0.25μC
0.50μC
0.75μC
1.00μC
1.25μC
1.50μC
I
F
=3.5A
I
F
=7A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 21. Typical reverse recovery time as
a function of diode current slope
(
V
R
= 800V,
T
j
= 150
°
C,
dynamic test circuit in Fig.E )
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 22. Typical reverse recovery charge
as a function of diode current slope
(
V
R
= 800V,
T
j
= 150
°
C,
dynamic test circuit in Fig.E )
I
r
,
R
200A/
μ
s
400A/
μ
s
600A/
μ
s
800A/
μ
s
0A
5A
10A
15A
20A
25A
I
F
=3.5A
I
F
=7A
d
r
/
,
D
O
200A/
μ
s
400A/
μ
s
600A/
μ
s
800A/
μ
s
0A/
μ
s
100A/
μ
s
200A/
μ
s
300A/
μ
s
I
F
=3.5A
I
F
=7A
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 23. Typical reverse recovery current
as a function of diode current slope
(
V
R
= 800V,
T
j
= 150
°
C,
dynamic test circuit in Fig.E )
di
F
/dt
,
DIODE CURRENT SLOPE
Figure 24. Typical diode peak rate of fall of
reverse recovery current as a function of
diode current slope
(
V
R
= 800V,
T
j
= 150
°
C,
dynamic test circuit in Fig.E )
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKW07N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW07N120E8161 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW07N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO247 |
| SKW1000 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ANTIPARALLEL THYRISTORS WITH NON-ISOLATED WATER FLOW |
| SKW10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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