- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376354 > SKW07N120 (INFINEON TECHNOLOGIES AG) Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode PDF資料下載
參數(shù)資料
| 型號： | SKW07N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù) |
| 文件頁數(shù)： | 8/13頁 |
| 文件大小： | 413K |
| 代理商： | SKW07N120 |
SKW07N120
Power Semiconductors
8
Jul-02
V
G
,
G
-
E
0nC
20nC
Q
GE
,
GATE CHARGE
40nC
60nC
80nC
0V
5V
10V
15V
20V
U
CE
=960V
C
,
C
0V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 18. Typical capacitance as a
function of collector-emitter voltage
(
V
GE
= 0V,
f
= 1MHz)
10V
20V
30V
100pF
1nF
C
rss
C
oss
C
iss
Figure 17. Typical gate charge
(
I
C
= 8A)
t
s
,
S
10V
11V
12V
13V
14V
15V
0
μ
s
5
μ
s
10
μ
s
15
μ
s
20
μ
s
25
μ
s
30
μ
s
I
C
,
S
10V
12V
14V
16V
18V
20V
0A
50A
100A
150A
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 19. Short circuit withstand time as a
function of gate-emitter voltage
(
V
CE
= 1200V, start at
T
j
= 25
°
C)
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 20. Typical short circuit collector
current as a function of gate-emitter voltage
(100V
≤
V
CE
≤
1200V,
T
C
= 25
°
C,
T
j
≤
150
°
C)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SLA24C01-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C01-S | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C02-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C02-S | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C01-D-3 | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKW07N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW07N120E8161 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW07N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO247 |
| SKW1000 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ANTIPARALLEL THYRISTORS WITH NON-ISOLATED WATER FLOW |
| SKW10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復(fù)。