- 您現(xiàn)在的位置：買賣IC網(wǎng) > PDF目錄376354 > SKW07N120 (INFINEON TECHNOLOGIES AG) Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode PDF資料下載
參數(shù)資料
| 型號(hào)： | SKW07N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù) |
| 文件頁(yè)數(shù)： | 5/13頁(yè) |
| 文件大?。?/td> | 413K |
| 代理商： | SKW07N120 |
第1頁(yè)第2頁(yè)第3頁(yè)第4頁(yè)當(dāng)前第5頁(yè)第6頁(yè)第7頁(yè)第8頁(yè)第9頁(yè)第10頁(yè)第11頁(yè)第12頁(yè)第13頁(yè)
SKW07N120
Power Semiconductors
5
Jul-02
I
C
,
C
0V
1V
2V
3V
4V
5V
6V
7V
0A
5A
10A
15A
20A
25A
15V
13V
11V
9V
7V
V
GE
=17V
I
C
,
C
0V
1V
2V
3V
4V
5V
6V
7V
0A
5A
10A
15A
20A
25A
15V
13V
11V
9V
7V
V
GE
=17V
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 5. Typical output characteristics
(
T
j
= 25
°
C)
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 6. Typical output characteristics
(
T
j
= 150
°
C)
I
C
,
C
3V
5V
7V
9V
11V
0A
5A
10A
15A
20A
25A
T
J
=-40°C
T
J
=+150°C
T
J
=+25°C
V
C
,
C
-
E
-50°C
0°C
50°C
100°C
150°C
0V
1V
2V
3V
4V
5V
6V
I
C
=16A
I
C
=4A
I
C
=8A
V
GE
,
GATE
-
EMITTER VOLTAGE
Figure 7. Typical transfer characteristics
(
V
CE
= 20V)
T
j
,
JUNCTION TEMPERATURE
Figure 8. Typical collector-emitter
saturation voltage as a function of junction
temperature
(
V
GE
= 15V)
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| SLA24C01-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C01-S | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C02-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C02-S | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C01-D-3 | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKW07N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW07N120E8161 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW07N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO247 |
| SKW1000 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ANTIPARALLEL THYRISTORS WITH NON-ISOLATED WATER FLOW |
| SKW10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。