- 您現(xiàn)在的位置：買賣IC網 > PDF目錄376354 > SKW07N120 (INFINEON TECHNOLOGIES AG) Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode PDF資料下載
參數(shù)資料
| 型號： | SKW07N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴散核武器條約與軟，恢復快反平行快恢復二極管技術 |
| 文件頁數(shù)： | 4/13頁 |
| 文件大?。?/td> | 413K |
| 代理商： | SKW07N120 |
SKW07N120
Power Semiconductors
4
Jul-02
I
C
,
C
10Hz
100Hz
f
,
SWITCHING FREQUENCY
Figure 1. Collector current as a function of
switching frequency
(
T
j
≤
150
°
C,
D =
0.5,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 47
)
1kHz
10kHz
100kHz
0A
5A
10A
15A
20A
25A
30A
35A
T
C
=110°C
T
C
=80°C
I
C
,
C
1V
10V
100V
1000V
0.1A
1A
10A
DC
1ms
200
μ
s
50
μ
s
15
μ
s
t
p
=5
μ
s
V
CE
,
COLLECTOR
-
EMITTER VOLTAGE
Figure 2. Safe operating area
(
D =
0,
T
C
= 25
°
C,
T
j
≤
150
°
C)
P
t
,
P
25°C
50°C
75°C
100°C
125°C
0W
25W
50W
75W
100W
125W
150W
I
C
,
C
25°C
50°C
T
C
,
CASE TEMPERATURE
75°C
100°C
125°C
0A
5A
10A
15A
20A
T
C
,
CASE TEMPERATURE
Figure 3. Power dissipation as a function
of case temperature
(
T
j
≤
150
°
C)
Figure 4. Collector current as a function of
case temperature
(
V
GE
≤
15V,
T
j
≤
150
°
C)
I
c
I
c
相關PDF資料 |
PDF描述 |
|---|---|
| SLA24C01-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C01-S | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C02-D | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C02-S | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
| SLA24C01-D-3 | The CAT24FC02 is a 2-kb Serial CMOS EEPROM internally organized as 256 words of 8 bits each |
相關代理商/技術參數(shù) |
參數(shù)描述 |
|---|---|
| SKW07N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW07N120E8161 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW07N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO247 |
| SKW1000 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ANTIPARALLEL THYRISTORS WITH NON-ISOLATED WATER FLOW |
| SKW10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
發(fā)布緊急采購，3分鐘左右您將得到回復。