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參數(shù)資料
| 型號(hào)： | SKW07N120 |
| 廠商： | INFINEON TECHNOLOGIES AG |
| 英文描述： | Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| 中文描述： | 快速IGBT在不擴(kuò)散核武器條約與軟，恢復(fù)快反平行快恢復(fù)二極管技術(shù) |
| 文件頁數(shù)： | 7/13頁 |
| 文件大?。?/td> | 413K |
| 代理商： | SKW07N120 |
SKW07N120
Power Semiconductors
7
Jul-02
E
,
S
0A
5A
10A
15A
20A
0mJ
1mJ
2mJ
3mJ
4mJ
5mJ
E
on
*
E
off
E
ts
*
E
,
S
0
20
40
60
80
100
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
2.5mJ
E
ts
*
E
on
*
E
off
I
C
,
COLLECTOR CURRENT
Figure 13. Typical switching energy losses
as a function of collector current
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
R
G
= 47
,
dynamic test circuit in Fig.E )
R
G
,
GATE RESISTOR
Figure 14. Typical switching energy losses
as a function of gate resistor
(inductive load,
T
j
= 150
°
C,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 8A,
dynamic test circuit in Fig.E )
E
,
S
-50°C
0°C
50°C
100°C
150°C
0.0mJ
0.5mJ
1.0mJ
1.5mJ
2.0mJ
E
ts
*
E
on
*
E
off
Z
t
,
T
1μs
10μs
100μs
t
p
,
PULSE WIDTH
1ms
10ms 100ms
1s
10
-3
K/W
10
-2
K/W
10
-1
K/W
10
0
K/W
0.01
0.02
0.05
0.1
0.2
single pulse
D
=0.5
T
j
,
JUNCTION TEMPERATURE
Figure 15. Typical switching energy losses
as a function of junction temperature
(inductive load,
V
CE
= 800V,
V
GE
= +15V/0V,
I
C
= 8A,
R
G
= 47
,
dynamic test circuit in Fig.E )
Figure 16. IGBT transient thermal
impedance as a function of pulse width
(
D
=
t
p
/
T
)
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
on
and
E
ts
include losses
due to diode recovery.
*)
E
and
E
include losses
due to diode recovery.
C
1
=
τ
1
/
R
1
R
1
R
2
C
2
=
τ
2
/
R
2
R
,(K/W )
0.1020
0.40493
0.26391
0.22904
τ
,
(s)
0.77957
0.21098
0.01247
0.00092
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| SKW07N120_08 | 制造商:INFINEON 制造商全稱:Infineon Technologies AG 功能描述:Fast IGBT in NPT-technology with soft, fast recovery anti-parallel EmCon diode |
| SKW07N120E8161 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 1200V 8A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
| SKW07N120FKSA1 | 制造商:Infineon Technologies AG 功能描述:Trans IGBT Chip N-CH 1.2KV 16.5A 3-Pin(3+Tab) TO-247 制造商:Infineon Technologies AG 功能描述:IGBT PRODUCTS - Rail/Tube 制造商:Infineon Technologies AG 功能描述:IGBT NPT 1200V 16.5A 125W TO247 |
| SKW1000 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:ANTIPARALLEL THYRISTORS WITH NON-ISOLATED WATER FLOW |
| SKW10N60 | 功能描述:IGBT 晶體管 FAST IGBT NPT TECH 600V 10A RoHS:否 制造商:Fairchild Semiconductor 配置: 集電極—發(fā)射極最大電壓 VCEO:650 V 集電極—射極飽和電壓:2.3 V 柵極/發(fā)射極最大電壓:20 V 在25 C的連續(xù)集電極電流:150 A 柵極—射極漏泄電流:400 nA 功率耗散:187 W 最大工作溫度: 封裝 / 箱體:TO-247 封裝:Tube |
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