參數(shù)資料
型號: T431616D
廠商: Electronic Theatre Controls, Inc.
英文描述: 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
中文描述: 100萬× 16內(nèi)存為512k × 16Bit的X 2Banks同步DRAM
文件頁數(shù): 6/74頁
文件大?。?/td> 781K
代理商: T431616D
TE
CH
tm
T431616D/E
TM Technology Inc. reserves the right
P. 14
Publication Date: FEB. 2007
to change products or specifications without notice.
Revision: A
Test Mode field (A8~A7)
These two bits are used to enter the test mode and must be programmed to "00" in normal operation.
A8
A7
Test Mode
0
normal mode
0
1
Vendor Use Only
1
X
Vendor Use Only
Single Write Mode (A9)
This bit is used to select the write mode. When the BS bit is "0", the Burst-Read-Burst-Write mode is
selected. When the BS bit is "1", the Burst-Read-Single-Write mode is selected.
A9
Single Write Mode
0
Burst-Read-Burst-Write
1
Burst-Read-Single-Write
Note: A10 and A11 should stay “L” during mode set cycle.
8
No-Operation command
(RAS# = "H", CAS# = "H", WE# = "H")
The No-Operation command is used to perform a NOP to the SDRAM which is selected (CS# is Low).
This prevents unwanted commands from being registered during idle or wait states.
9
Burst Stop command
(RAS# = "H", CAS# = "H", WE# = "L")
The Burst Stop command is used to terminate either fixed-length or full-page bursts. This command is only
effective in a read/write burst without the auto precharge function. The terminated read burst ends after a delay
equal to the CAS# latency (refer to the following figure). The termination of a write burst is shown in the
following figure.
CLK
COM M AND
T0
T1
T2
T3T4T5
T6T7
T8
READ A
NOP
Burst Stop
DOUT A0
DOUT A1
DOUT A2
DOUT A3
CAS# latency=1
tCK1, DQ's
CAS# latency=2
tCK2, DQ's
CAS# latency=3
tCK3, DQ's
DOUT A0
DOUT A1
DOUT A2
DOUT A3
DOUT A0
DOUT A1
DOUT A2
DOUT A3
The burst ends after a delay equal to the CAS# latency.
Termination of a Burst Read Operation (Burst Length 4, CAS# Latency = 1, 2, 3)
相關(guān)PDF資料
PDF描述
T431616E 1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T450N 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
T451N 0 MHz - 10000 MHz 50 ohm RF/MICROWAVE TERMINATION
T523-020.00M TCXO, CLIPPED SINE OUTPUT, 20 MHz
T613-020.00M TCXO, CLIPPED SINE OUTPUT, 20 MHz
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
T431616D-5C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5CG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5S 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-5SG 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM
T431616D-6C 制造商:TMT 制造商全稱:TMT 功能描述:1M x 16 SDRAM 512K x 16bit x 2Banks Synchronous DRAM