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參數(shù)資料
| 型號： | UPD4564323G5-A10B-9JH |
| 廠商： | NEC Corp. |
| 英文描述： | 64M-bit Synchronous DRAM 4-bank, LVTTL |
| 中文描述： | 6400位同步DRAM 4銀行，LVTTL |
| 文件頁數(shù)： | 1/84頁 |
| 文件大?。?/td> | 1048K |
| 代理商： | UPD4564323G5-A10B-9JH |
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1999
MOS INTEGRATED CIRCUIT
μ
PD4564323 for Rev.
E
64M-bit Synchronous DRAM
4-bank, LVTTL
DATA SHEET
Document No.
Date Published
Printed in Japan
M14376EJ2V0DS00 (2nd edition)
December 1999 NS CP (K)
The mark
shows major revised points.
Description
The
μ
PD4564323 is a high-speed 67,108,864-bit synchronous dynamic random-access memory, organized as
524,288 words
×
32 bits
×
4 banks.
The synchronous DRAMs achieved high-speed data transfer using the pipeline architecture.
All inputs and outputs are synchronized with the positive edge of the clock.
The synchronous DRAMs are compatible with Low Voltage TTL (LVTTL).
These products are packaged in 86-pin TSOP (II).
Features
Fully Synchronous Dynamic RAM, with all signals referenced to a positive clock edge
Pulsed interface
Possible to assert random column address in every cycle
Quad internal banks controlled by BA0 and BA1 (Bank Select)
×
32 organization
Byte control by DQM0, DQM1, DQM2 and DQM3
Programmable Wrap sequence (Sequential / Interleave)
Programmable burst length (1, 2, 4, 8 and full page)
Programmable /CAS latency (2 and 3)
Automatic precharge and controlled precharge
CBR (Auto) refresh and self refresh
Single 3.3 V
±
0.3 V power supply
LVTTL compatible inputs and outputs
4,096 refresh cycles / 64 ms
Burst termination by Burst stop command and Precharge command
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