參數(shù)資料
型號： UPD4564323G5-A10B-9JH
廠商： NEC Corp.
英文描述： 64M-bit Synchronous DRAM 4-bank, LVTTL
中文描述： 6400位同步DRAM 4銀行，LVTTL
文件頁數(shù)： 11/84頁
文件大?。?/td> 1048K
代理商： UPD4564323G5-A10B-9JH
Data Sheet M14376EJ2V0DS00
11
μ
PD4564323 for Rev.
E
Self refresh entry command
(/CS, /RAS, /CAS, CKE = Low, /WE = High)
After the command execution, self refresh operation continues while CKE
remains low. When CKE goes high, the
μ
PD4564323 exits the self refresh
mode.
During self refresh mode, refresh interval and refresh operation are
performed internally, so there is no need for external control.
Before executing self refresh, all banks must be precharged.
Fig.7
Self refresh entry command
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
BA0, BA1
(Bank select)
Burst stop command
(/CS, /WE = Low, /RAS, /CAS = High)
This command can stop the current burst operation.
Fig.8
Burst stop command in Full
Page Mode
/WE
/CAS
/RAS
/CS
CKE
CLK
Add
A10
(Bank select)
H
No operation
(/CS = Low, /RAS, /CAS, /WE = High)
This command is not an execution command. No operations begin or
terminate by this command.
Fig.9
No operation
/WE
/CAS
/RAS
/CS
CKE
CLK
H
Add
A10
BA0, BA1
(Bank select)
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