參數(shù)資料
型號(hào)： W9864G6DB-7
廠商： WINBOND ELECTRONICS CORP
元件分類： DRAM
英文描述： 1M x 4 BANKS x 16 BITS SDRAM
中文描述： 4M X 16 SYNCHRONOUS DRAM, 5.5 ns, PBGA60
封裝： 0.65 MM PITCH, BGA-60
文件頁(yè)數(shù)： 2/48頁(yè)
文件大?。?/td> 1283K
代理商： W9864G6DB-7
W986432DH
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11. TIMING WAVEFORMS....................................................................................................................19
Command Input Timing........................................................................................................................... 19
Read Timing ........................................................................................................................................... 20
Control Timing of Input Data................................................................................................................... 21
Control Timing of Output Data................................................................................................................ 22
Mode Register Set Cycle........................................................................................................................ 23
12. OPERATING TIMING EXAMPLE ....................................................................................................24
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3) ................................................................ 24
Interleaved Bank Read (Burst Length = 4, CAS Latency = 3, Auto Pre-charge).................................... 25
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3) ................................................................ 26
Interleaved Bank Read (Burst Length = 8, CAS Latency = 3, Auto Pre-charge).................................... 27
Interleaved Bank Write (Burst Length = 8) ............................................................................................. 28
Interleaved Bank Write (Burst Length = 8, Auto Pre-charge)................................................................. 29
Page Mode Read (Burst Length = 4, CAS Latency = 3)......................................................................... 30
Page Mode Read/Write (Burst Length = 8, CAS Latency = 3) ............................................................... 31
Auto Pre-charge Read (Burst Length = 4, CAS Latency = 3)................................................................. 32
Auto Pre-charge Write (Burst Length = 4).............................................................................................. 33
Auto Refresh Cycle................................................................................................................................. 34
Self Refresh Cycle.................................................................................................................................. 35
Bust Read and Single Write (Burst Length = 4, CAS Latency = 3) ........................................................ 36
Power Down Mode ................................................................................................................................. 37
Auto Pre-charge Timing (Write Cycle).................................................................................................... 38
Auto Pre-charge Timing (Read Cycle).................................................................................................... 39
Timing Chart of Read to Write Cycle...................................................................................................... 40
Timing Chart of Write to Read Cycle...................................................................................................... 41
Timing Chart of Burst Stop Cycle (Burst Stop Command)...................................................................... 42
Timing Chart of Burst Stop Cycle (Pre-charge Command)..................................................................... 43
CKE/DQM Input Timing (Write Cycle) .................................................................................................... 44
CKE/DQM Input Timing (Read Cycle) .................................................................................................... 45
Self Refresh/Power Down Mode Exit Timing.......................................................................................... 46
13. PACKAGE DIMENSIONS................................................................................................................47
86L TSOP (II)-400 mil............................................................................................................................. 47
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相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
W9864G6GH 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 16 BITS SDRAM
W9864G6GH-5 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 16 BITS SDRAM
W9864G6GH-6 制造商:Winbond Electronics Corp 功能描述:4*16BIT SDRAM
W9864G6GH-6I 制造商:WINBOND 制造商全稱:Winbond 功能描述:1M 】 4 BANKS 】 16 BITS SDRAM
W9864G6GH-7 制造商:Winbond Electronics Corp 功能描述:64M 3.3V SDRAM 4M X 16
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