參數(shù)資料
型號(hào)： WED9LC6816V1610BI
元件分類(lèi)： 存儲(chǔ)器
英文描述： SPECIALTY MEMORY CIRCUIT, PBGA153
封裝： MO-163, BGA-153
文件頁(yè)數(shù)： 26/27頁(yè)
文件大?。?/td> 370K
代理商： WED9LC6816V1610BI
8
White Electronic Designs Corporation (508) 366-5151 www.whiteedc.com
WED9LC6816V
January 2001
SDRAM AC CHARACTERISTICS
(VCC = 3.3V -5% / +10% unless otherwise noted; 0
°C ≤ TA ≤ 70°C, Commercial; -40°C ≤ TA ≤ 85°C, Industrial)
Symbol
125MHz
100MHz
83MHz
Parameter
Min
Max
Min
Max
Min
Max
Units
Clock Cycle Time (1)
CL = 3
tCC
8
1000
10
1000
12
1000
ns
CL = 2
tCC
10
1000
12
1000
15
1000
Clock to valid Output delay (1,2)
tSAC
67
8
ns
Output Data Hold Time (2)
tOH
33
3
ns
Clock HIGH Pulse Width (3)
tCH
33
3
ns
Clock LOW Pulse Width (3)
tCL
33
3
ns
Input Setup Time (3)
tSS
22
2
ns
Input Hold Time (3)
tSH
11
1
ns
CLK to Output Low-Z (2)
tSLZ
22
2
ns
CLK to Output High-Z
tSHZ
77
8
ns
Row Active to Row Active Delay (4)
tRRD
20
24
ns
RAS\ to CAS\ Delay (4)
tRCD
20
24
ns
Row Precharge Time (4)
tRP
20
24
ns
Row Active Time (4)
tRAS
50
10,000
50
10,000
60
10,000
ns
Row Cycle Time - Operation (4)
tRC
70
80
90
ns
Row Cycle Time - Auto Refresh (4,8)
tRFC
70
80
90
ns
Last Data in to New Column Address Delay (5)
tCDL
1
CLK
Last Data in to Row Precharge (5)
tRDL
1
CLK
Last Data in to Burst Stop (5)
tBDL
1
CLK
Column Address to Column Address Delay (6)
tCCD
1.5
CLK
Number of Valid Output Data (7)
2
12
1
ea
NOTES:
1. Parameters depend on programmed CAS latency.
2. If clock rise time is longer than 1ns (trise/2 -0.5)ns should be added to the parameter.
3. Assumed input rise and fall time = 1ns. If trise of tfall are longer than 1ns. [(trise = tfall)/2] - 1ns should be added to the parameter.
4. The minimum number of clock cycles required is detemined by dividing the minimum time required by the clock cycle time and then rounding up to the
next higher integer.
5. Minimum delay is required to complete write.
6. All devices allow every cycle column address changes.
7. In case of row precharge interrupt, auto precharge and read burst stop.
8. A new command may be given tRFC after self-refresh exit.
相關(guān)PDF資料
PDF描述
WS512K32BV-20G2MEA 2M X 8 MULTI DEVICE SRAM MODULE, 20 ns, CQFP68
WEDPNF8M721V-1210BC SPECIALTY MEMORY CIRCUIT, PBGA275
WS128K32N-100HSC 512K X 8 MULTI DEVICE SRAM MODULE, 100 ns, CPGA66
WMF128K8-150DESMD5A 128K X 8 FLASH 5V PROM, 150 ns, CDSO32
WF2M32-90H2C 8M X 8 FLASH 12V PROM MODULE, 90 ns, CPGA66
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
WED9LC6816V1612BC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM
WED9LC6816V1612BI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM
WED9LC6816V2010BC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM
WED9LC6816V2010BI 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM
WED9LC6816V2012BC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:256K X 32 SSRAM/ 4M X 32 SDRAM
發(fā)布緊急采購(gòu)，3分鐘左右您將得到回復(fù)。

采購(gòu)需求

(若只采購(gòu)一條型號(hào)，填寫(xiě)一行即可)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

發(fā)布成功！您可以繼續(xù)發(fā)布采購(gòu)。也可以進(jìn)入我的后臺(tái)，查看報(bào)價(jià)

*型號(hào) *數(shù)量 廠商 批號(hào) 封裝
添加更多采購(gòu)

我的聯(lián)系方式

*
*
*