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參數(shù)資料
| 型號(hào)： | 28F004SC |
| 廠商： | Intel Corp. |
| 英文描述： | BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4, 8, AND 16 MBIT |
| 中文描述： | 字節(jié)寬SmartVoltage FlashFile Memory系列4，8和16兆比特 |
| 文件頁數(shù)： | 6/41頁 |
| 文件大?。?/td> | 703K |
| 代理商： | 28F004SC |
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BYTE-WIDE SMART 3 FlashFile MEMORY FAMILY
E
6
PRELIMINARY
To protect programmed data, each block can be
locked. This block locking mechanism uses a
combination of bits, block lock-bits and a master
lock-bit, to lock and unlock individual blocks. The
block lock-bits gate block erase and program
operations, while the master lock-bit gates block
lock-bit configuration operations. Lock-bit config-
uration operations (Set Block Lock-Bit, Set Master
Lock-Bit, and Clear Block Lock-Bits commands) set
and clear lock-bits.
The status register and RY/BY# output indicate
whether or not the device is busy executing or
ready for a new command. Polling the status
register, system software retrieves WSM feedback.
The RY/BY# output gives an additional indicator of
WSM activity by providing a hardware status signal.
Like the status register, RY/BY#-low indicates that
the WSM is performing a block erase, program, or
lock-bit
configuration
operation.
indicates that the WSM is ready for a new
command, block erase is suspended, program is
suspended, or the device is in deep power-down
mode.
RY/BY#-high
The Automatic Power Savings (APS) feature
substantially reduces active current when the
device is in static mode (addresses not switching).
In APS mode, the typical I
CCR
current is 3 mA.
When CE# and RP# pins are at V
CC
, the
component enters a CMOS standby mode. Driving
RP# to GND enables a deep power-down mode
which significantly reduces power consumption,
provides write protection, resets the device, and
clears the status register. A reset time (t
PHQV
) is
required from RP# switching high until outputs are
valid. Likewise, the device has a wake time (t
PHEL
)
from RP#-high until writes to the CUI are
recognized.
1.3
Pinout and Pin Description
The family of devices is available in 40-lead TSOP
(Thin Small Outline Package, 1.2 mm thick), 44-
lead PSOP (Plastic Small Outline Package) and 40-
bump
μ
BGA* CSP (28F008S3 and 28F016S3 only).
Pinouts are shown in Figures 2, 3 and 4.
4-Mbit: A - A ,
8-Mbit: A - A ,
16-Mbit: A - A
Input
Buffer
Output
Buffer
Identifier
Register
Status
Register
Command
Register
I/O Logic
Data
Comparator
Input
Buffer
Address
Latch
Address
Counter
Y
Decoder
X
Decoder
Y Gating
4-Mbit: Eight
8-Mbit: Sixteen
16-Mbit: Thirty-Two
64-Kbyte Blocks
Write State
Machine
Program/Erase
Voltage Switch
CE#
WE#
OE#
RP#
RY/BY#
V
V
GND
DQ - DQ
PP
V
CC
7
Figure 1. Block Diagram
相關(guān)PDF資料 |
PDF描述 |
|---|---|
| 28F008B3 | SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 28F008C3 | 3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F008SA | 8-MBIT (1-MBIT x 8) FlashFileTM MEMORY |
| 28F008SA-L | 8-MBIT (1 MBIT x 8) FLASHFILETM MEMORY |
| 28F008S3 | 3 V FlashFile Memory(3V閃速存儲(chǔ)器) |
相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 28F008B3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:SMART 3 ADVANCED BOOT BLOCK BYTE-WIDE |
| 28F008BE-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:8-MBIT (512K X 16. 1024K X 8) SmartVoltage BOOT BLOCK FLASH MEMORY FAMILY |
| 28F008BV-T/B | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Boot Flash |
| 28F008C3 | 制造商:INTEL 制造商全稱:Intel Corporation 功能描述:3 VOLT ADVANCED+ BOOT BLOCK 8-, 16-, 32-MBIT FLASH MEMORY FAMILY |
| 28F008S3 | 制造商:未知廠家 制造商全稱:未知廠家 功能描述:Byte-Wide Smart 3 Flashfile Memory Family 4 8 and |
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