參數(shù)資料
型號(hào): 28F016SA
廠商: Intel Corp.
英文描述: 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器)
中文描述: 16兆位(1兆位× 16,2兆位× 8)FlashFile內(nèi)存(16米位(1米位× 16,2米位× 8)FlashFile存儲(chǔ)器)
文件頁數(shù): 47/55頁
文件大?。?/td> 849K
代理商: 28F016SA
E
5.10 AC Characteristics for Page Buffer Write Operations:
COMMERCIAL AND EXTENDED TEMPERATURE
(1)
(Continued)
V
CC
= 5.0V ± 10%, 5.0V ± 5%, T
A
= 0
°
C to +70
°
C, –40
°
C to +85
°
C
28F016SA
47
SEE NEW DESIGN RECOMMENDATIONS
Temp
Commercial
Commercial
Comm/Ext
Sym
Parameter
Speed
–70
–80
–100
Unit
V
CC
5.0V ± 5%
5.0V ± 10%
5.0V ± 10%
Notes
Min
Typ
Max
Min
Typ
Max
Min
Typ
Max
t
AVAV
Write Cycle Time
70
80
100
ns
t
ELWL
CE# Setup to
WE# Going Low
0
0
0
ns
t
AVWL
Address Setup to
WE# Going Low
3
0
0
0
ns
t
DVWH
Data Setup to
WE# Going High
2
50
50
50
ns
t
WLWH
WE# Pulse Width
40
50
50
ns
t
WHDX
Data Hold from
WE# High
2
0
0
0
ns
t
WHAX
Address Hold
from WE# High
2
10
10
10
ns
t
WHEH
CE# Hold from
WE# High
10
10
10
ns
t
WHWL
WE# Pulse Width
High
30
30
50
ns
t
GHWL
Read Recovery
before Write
0
0
0
ns
t
WHGL
Write Recovery
before Read
60
65
80
ns
NOTES:
CE# is defined as the latter of CE
0
# or CE
1
# going low or the first of CE
0
# or CE
1
# going high.
1.
These are WE#
–controlled write timings, equivalent CE#–controlled write timings apply.
2.
Sampled, but not 100% tested.
3.
Address must be valid during the entire WE# low pulse or the entire CE# low pulse for CE#-controlled writes.
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