參數(shù)資料
型號(hào)： 28F016SA
廠商： Intel Corp.
英文描述： 16-Mbit(1 Mbit x 16, 2 Mbit x 8) FlashFile Memory(16-M位(1 M位 x 16, 2 M位 x 8) FlashFile存儲(chǔ)器)
中文描述： 16兆位（1兆位× 16，2兆位× 8）FlashFile內(nèi)存（16米位（1米位× 16，2米位× 8）FlashFile存儲(chǔ)器）
文件頁(yè)數(shù)： 9/55頁(yè)
文件大?。?/td> 849K
代理商： 28F016SA
E
2.1 Lead Descriptions
(Continued)
28F016SA
9
SEE NEW DESIGN RECOMMENDATIONS
Symbol
Type
Name and Function
RY/BY#
OPEN DRAIN
OUTPUT
READY/BUSY:
Indicates status of the internal WSM. When low, it
indicates that the WSM is busy performing an operation. RY/BY# high
indicates that the WSM is ready for new operations (or WSM has
completed all pending operations), or block erase is suspended, or the
device is in deep power-down mode. This output is always active (i.e., not
floated to tri-state off when OE# or CE
0
#,CE
1
# are high), except if a
RY/BY# Pin Disable command is issued.
WP#
INPUT
WRITE PROTECT:
Erase blocks can be locked by writing a nonvolatile
lock-bit for each block. When WP# is low, those locked blocks as
reflected by the Block-Lock Status bits (BSR.6), are protected from
inadvertent data programs or block erases. When WP# is high, all blocks
can be written or erased regardless of the state of the lock-bits. The WP#
input buffer is disabled when RP# transitions low (deep power-down
mode).
BYTE#
INPUT
BYTE ENABLE:
BYTE# low places device in x8 mode. All data is then
input or output on DQ
0
–7
, and DQ
8
–15
float. Address A
0
selects between
the high and low byte. BYTE# high places the device in x16 mode, and
turns off the A
0
input buffer. Address A
1
then becomes the lowest order
address.
3/5#
INPUT
3.3/5.0 VOLT SELECT:
3/5# high configures internal circuits for 3.3V
operation. 3/5# low configures internal circuits for 5.0V operation.
NOTES:
Reading the array with 3/5# high in a 5.0V system could damage the
device.
There is a significant delay from 3/5# switching to valid data.
V
PP
SUPPLY
ERASE/PROGRAM POWER SUPPLY:
For erasing memory array blocks
or writing words/bytes/pages into the flash array.
V
CC
SUPPLY
DEVICE POWER SUPPLY (3.3V ± 10%, 5.0V ± 10%, 5.0V ± 5%):
Do not leave any power pins floating.
GND
SUPPLY
GROUND FOR ALL INTERNAL CIRCUITRY:
Do not leave any ground pins floating.
NC
NO CONNECT:
Lead may be driven or left floating.
相關(guān)PDF資料
PDF描述
28F016XD 16-Mbit Synchronous Flash Memory(16M位DRAM接口閃速存儲(chǔ)器)
28F016XS 16-Mbit Synchronous Flash Memory(16M位同步閃速存儲(chǔ)器)
28F020 5 V Bulk Erase Flash Memory(5V 整體擦寫(xiě)閃速存儲(chǔ)器)
28F128J3A 3 Volt Intel StrataFlash Memory(3 V 128M位Strata閃速存儲(chǔ)器)
28F320J3A 3 Volt Intel StrataFlash Memory(3 V 32M位英特爾StrataFlash存儲(chǔ)器)
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
28F016SA/DD28F032SA 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:INFORMATION
28F016SA-070 制造商:undefined 功能描述:
28F016SC 制造商:未知廠家 制造商全稱(chēng):未知廠家 功能描述:28F016SC - BYTE-WIDE SmartVoltage FlashFile MEMORY FAMILY 4. 8. AND 16 MBIT
28F016SV 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16, 2 MBIT x 8) FlashFile MEMORY
28F016XD 制造商:INTEL 制造商全稱(chēng):Intel Corporation 功能描述:16-MBIT (1 MBIT x 16) DRAM-INTERFACE FLASH MEMORY
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