參數(shù)資料
型號: 29F200C-90
廠商: Macronix International Co., Ltd.
英文描述: 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY
中文描述: 200萬位[256Kx8/128Kx16]的CMOS閃存
文件頁數(shù): 10/44頁
文件大小: 447K
代理商: 29F200C-90
10
P/N:PM1250
REV. 1.0 , DEC. 14, 2005
MX29F200C T/B
Status
Q7
Q6
Q5
Q3
Q2
RY/BY#
Note1
Note2
Byte Program in Auto Program Algorithm
Q7#
Toggle
0
N/A
No
0
Toggle
Auto Erase Algorithm
0
Toggle
0
1
Toggle
0
Erase Suspend Read
(Erase Suspended Sector)
1
No
0
N/A Toggle
1
Toggle
In Progress
Erase Suspended Mode
Erase Suspend Read
(Non-Erase Suspended Sector)
Data
Data
Data
Data
Data
1
Erase Suspend Program
Q7#
Toggle
0
N/A
N/A
0
Byte Program in Auto Program Algorithm
Q7#
Toggle
1
N/A
No
0
Toggle
Exceeded
Time Limits Auto Erase Algorithm
0
Toggle
1
1
Toggle
0
Erase Suspend Program
Q7#
Toggle
1
N/A
N/A
0
Table 4. Write Operation Status
Notes:
1. Q7 and Q2 require a valid address when reading status information. Refer to the appropriate subsection for further
details.
2. Q5 switches to '1' when an Auto Program or Auto Erase operation has exceeded the maximum timing limits.
See "Q5:Exceeded Timing Limits " for more information.
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