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參數(shù)資料
| 型號(hào)： | 29F200C-90 |
| 廠商： | Macronix International Co., Ltd. |
| 英文描述： | 2M-BIT [256Kx8/128Kx16] CMOS FLASH MEMORY |
| 中文描述： | 200萬(wàn)位[256Kx8/128Kx16]的CMOS閃存 |
| 文件頁(yè)數(shù)： | 37/44頁(yè) |
| 文件大?。?/td> | 447K |
| 代理商： | 29F200C-90 |
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37
P/N:PM1250
REV. 1.0 , DEC. 14, 2005
MX29F200C T/B
RECOMMENDED OPERATING CONDITIONS
At Device Power-Up
AC timing illustrated in Figure A is recommended for the supply voltages and the control signals at device power-up.
If the timing in the figure is ignored, the device may not operate correctly.
Figure A. AC Timing at Device Power-Up
Notes :
1. Sampled, not 100% tested.
2. This specification is applied for not only the device power-up but also the normal operations.
Symbol
tVR
tR
tF
Parameter
VCC Rise Time
Input Signal Rise Time
Input Signal Fall Time
Notes
1
1,2
1,2
Min.
20
Max.
500000
20
20
Unit
us/V
us/V
us/V
VCC
ADDRESS
CE#
WE#
OE#
DATA
tVR
tACC
tR or tF
tCE
tF
VCC(min)
GND
VIH
VIL
VIH
VIL
VIH
VIL
VIH
VIL
VOH
High Z
VOL
Valid
Ouput
Valid
Address
tR or tF
tR
tOE
tF
tR
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