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參數(shù)資料
| 型號： | 29LV650 |
| 廠商： | Fujitsu Limited |
| 英文描述： | 64M (4M x 16) BIT |
| 中文描述： | 64M號（4米× 16）位 |
| 文件頁數(shù)： | 16/57頁 |
| 文件大?。?/td> | 625K |
| 代理商： | 29LV650 |
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MBM29LV650UE/651UE-
90/12
16
Table 7 Common Flash Memory Interface Code
Description
A
0
to A
6
10h
11h
12h
13h
14h
15h
16h
17h
18h
19h
1Ah
1Bh
DQ
0
to DQ
15
0051h
0052h
0059h
0002h
0000h
0040h
0000h
0000h
0000h
0000h
0000h
0027h
Query-unique ASCII string
“QRY”
Primary OEM Command Set
2h: AMD/FJ standard type
Address for Primary
Extended Table
Alternate OEM Command
Set (00h = not applicable)
Address for Alternate OEM
Extended Table
V
CC
Min. (write/erase)
D7-4: volt, D3-0: 100 mvolt
V
CC
Max. (write/erase)
D7-4: volt, D3-0: 100 mvolt
V
PP
Min. voltage
V
PP
Max. voltage
Typical timeout per single
byte/word write 2
N
μ
s
Typical timeout for Min. size
buffer write 2
N
μ
s
Typical timeout per individual
block erase 2
N
ms
Typical timeout for full chip
erase 2
N
ms
Max. timeout for byte/word
write 2
N
times typical
Max. timeout for buffer write
2
N
times typical
Max. timeout per individual
block erase 2
N
times typical
Max. timeout for full chip
erase 2
N
times typical
Device Size = 2
N
byte
Flash Device Interface
description
Max. number of byte in
multi-byte write = 2
N
Number of Erase Block
Regions within device
Erase Block Region 1
Information
1Ch
0036h
1Dh
1Eh
1Fh
0000h
0000h
0004h
20h
0000h
21h
000Ah
22h
0000h
23h
0005h
24h
0000h
25h
0004h
26h
0000h
27h
28h
29h
2Ah
2Bh
2Ch
0017h
0001h
0000h
0000h
0000h
0001h
2Dh
2Eh
2Fh
30h
007Fh
0000h
0000h
0001h
Description
A
0
to A
6
31h
32h
33h
34h
40h
41h
42h
43h
44h
45h
DQ
0
to DQ
15
0000h
0000h
0000h
0000h
0050h
0052h
0049h
0031h
0031h
0001h
Erase Block Region 2
Information
Query-unique ASCII string
“PRI”
Major version number, ASCII
Minor version number, ASCII
Address Sensitive Unlock
0h = Required
1h = Not Required
Erase Suspend
0h = Not Supported
1h = To Read Only
2h = To Read & Write
Sector Protection
0h = Not Supported
X = Number of sectors in per
group
Sector Temporary
Unprotection
00h = Not Supported
01h = Supported
Sector Protection Algorithm
Number of Sector for Bank 2
00h = Not Supported
Burst Mode Type
00h = Not Supported
Page Mode Type
00h = Not Supported
ACC (Acceleration) Supply
Minimum
00h = Not Supported,
D7-4: volt, D3-0: 100 mvolt
ACC (Acceleration) Supply
Maximum
00h = Not Supported,
D7-4: volt, D3-0: 100 mvolt
Boot Type
04h = MBM29LV651UE
05h = MBM29LV650UE
46h
0002h
47h
0004h
48h
0001h
49h
4Ah
0004h
0000h
4Bh
0000h
4Ch
0000h
4Dh
00B5h
4Eh
00C5h
4Fh
00XXh
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相關(guān)代理商/技術(shù)參數(shù) |
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|---|---|
| 29LV800BB-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV800BB-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV800BE | 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT |
| 29LV800BT-70 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
| 29LV800BT-90 | 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY |
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