參數(shù)資料
型號： 29LV650
廠商： Fujitsu Limited
英文描述： 64M (4M x 16) BIT
中文描述： 64M號（4米× 16）位
文件頁數(shù)： 2/57頁
文件大?。?/td> 625K
代理商： 29LV650
MBM29LV650UE/651UE-
90/12
2
(Continued)
A sector is typically erased and verified in 1.0 second. (If already completely preprogrammed.)
The device also features a sector erase architecture. The sector mode allows each sector to be erased and
reprogrammed without affecting other sectors. The MBM29LV650UE/651UE is erased when shipped from the
factory.
Internally generated and regulated voltages are provided for the program and erase operations. A low V
CC
detector automatically inhibits write operations on the loss of power. The end of program or erase is detected
by Data Polling of DQ
7
, by the Toggle Bit feature on DQ
6
. Once the end of a program or erase cycle has been
completed, the devices internally reset to the read mode.
The devices electrically erase all bits within a sector simultaneously via Fowler-Nordhiem tunneling. The words
are programmed one word at a time using the EPROM programming mechanism of hot electron injection.
I
FEATURES
0.23
μ
m Process Technology
Single 3.0 V read, program and erase
Minimizes system level power requirements
Compatible with JEDEC-standards
Uses same software commands with single-power supply Flash
Address don’t care during the command sequence
Industry-standard pinouts
48-pin TSOP (I) (Package suffix: TN - Normal Bend Type, TR - Reversed Bend Type)
Minimum 100,000 program/erase cycles
High performance
90 ns maximum access time
Flexible sector architecture
One hundred twenty-eight 32K word sectors
Any combination of sectors can be concurrently erased. Also supports full chip erase
Hidden ROM (Hi-ROM) region
128 word of Hi-ROM, accessible through a new “Hi-ROM Enable” command sequence
Factory serialized and protected to provide a secure electronic serial number (ESN)
WP input pin
At V
IL
, allows protection of first or last 32K word sector, regardless of sector protection/unprotection status
At V
IH
, allows removal of protection
MBM29LV650UE:
has the function to protect the last 32K word sector (SA 127)
MBM29LV651UE:
has the function to protect the first 32K word sector (SA 0)
ACC input pin
At V
ACC
, increases program performance
Embedded Erase
TM
* Algorithms
Automatically pre-programs and erases the chip or any sector
Embedded program
TM
* Algorithms
Automatically writes and verifies data at specified address
Data Polling and Toggle Bit feature for detection of program or erase cycle completion
Automatic sleep mode
When addresses remain stable, automatically switches themselves to low power mode
Low V
CC
write inhibit
≤
2.5 V
Erase Suspend/Resume
Suspends the erase operation to allow a read data and/or program in another sector within the same device
Sector group protection
Hardware method disables any combination of sector groups from program or erase operations
(Continued)
相關(guān)PDF資料
PDF描述
29LV800BB-70 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BB-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-70 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BE 8M (1M x 8/512 K x 16) BIT
相關(guān)代理商/技術(shù)參數(shù)
參數(shù)描述
29LV800BB-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BB-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BE 制造商:FUJITSU 制造商全稱:Fujitsu Component Limited. 功能描述:8M (1M x 8/512 K x 16) BIT
29LV800BT-70 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
29LV800BT-90 制造商:MCNIX 制造商全稱:Macronix International 功能描述:8M-BIT [1Mx8/512K x16] CMOS SINGLE VOLTAGE 3V ONLY FLASH MEMORY
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