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參數(shù)資料
| 型號(hào)： | 2N5630 |
| 廠商： | ON SEMICONDUCTOR |
| 元件分類： | 功率晶體管 |
| 英文描述： | Complementary Silicon NPN Power Transistor(16A，200W，120V（集電極-發(fā)射極），補(bǔ)償型硅NPN功率晶體管) |
| 中文描述： | 16 A, 120 V, NPN, Si, POWER TRANSISTOR, TO-204AA |
| 封裝： | TO-3, 2 PIN |
| 文件頁數(shù)： | 4/8頁 |
| 文件大?。?/td> | 118K |
| 代理商： | 2N5630 |
2N5630 2N5631 2N6030 2N6031
http://onsemi.com
4
Figure 4. Thermal Response
t, TIME (ms)
1.0
0.01
0.02
0.5
0.2
0.1
0.05
0.02
0.05
r
R
0.1
0.2
0.5
5.0
10
20
50
100
200
500
2000
1000
θ
JC
(t) = r(t)
θ
JC
θ
JC
= 0.875
°
C/W MAX
D CURVES APPLY FOR POWER
PULSE TRAIN SHOWN
READ TIME AT t
1
T
J(pk)
- T
C
= P
(pk)
θ
JC
(t)
P
(pk)
t
1
t
2
DUTY CYCLE, D = t
1
/t
2
D = 0.5
0.2
0.05
0.01
0.1
0.02
1.0
2.0
SINGLE PULSE
20
2.0
Figure 5. Active–Region Safe Operating Area
V
CE
, COLLECTOR-EMITTER VOLTAGE (VOLTS)
10
7.0
5.0
2.0
0.2
3.0
5.0 7.0
10
20
30
50
200
SECOND BREAKDOWN LIMITED
BONDING WIRE LIMITED
THERMALLY LIMITED @ T
C
= 25
°
C
70
1.0
I
CURVES APPLY BELOW
RATED V
CEO
T
J
= 200
°
C
dc
1.0ms
0.7
0.5
0.3
2N5630, 2N6030
3.0
100
0.5ms
50ms
5.0ms
2N5631, 2N6031
There are two limitations on the power handling ability of
a transistor: average junction temperature and second
breakdown. Safe operating area curves indicate I
C
– V
CE
limits of the transistor that must be observed for reliable
operation, i.e., the transistor must not be subjected to greater
dissipation than the curves indicate.
The data of Figure 5 is based on T
J(pk)
= 200 C; T
C
is
variable depending on conditions. Second breakdown pulse
limits are valid for duty cycles to 10% provided T
J(pk)
200 C. T
J(pk)
may be calculated from the data in
Figure 4. At high case temperatures, thermal limitations will
reduce the power that can be handled to values less than the
limitations imposed by second breakdown.
PNP
2N6030, 2N6031
5.0
0.2
Figure 6. Turn–Off Time
I
C
, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.5
0.3
0.7
1.0
2.0
7.0
10
20
T
J
= 25
°
C
I
C
/I
B
= 10
I
B1
= I
B2
V
CE
= 30 V
t
s
5.0
0.7
0.5
3.0
NPN
2N5630, 2N5631
t
f
4.0
0.2
I
C
, COLLECTOR CURRENT (AMP)
3.0
2.0
1.0
0.2
0.3
0.7
1.0
2.0
7.0
10
20
T
J
= 25
°
C
I
B1
= I
B2
I
C
/I
B
= 10
V
CE
= 30 V
t
s
5.0
0.4
0.5
3.0
t
f
0.6
0.3
t
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相關(guān)代理商/技術(shù)參數(shù) |
參數(shù)描述 |
|---|---|
| 2N5631 | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5631/D | 制造商:ONSEMI 制造商全稱:ON Semiconductor 功能描述:High-Voltage High-Power Transistors |
| 2N5631G | 功能描述:兩極晶體管 - BJT 16A 140V 200W NPN RoHS:否 制造商:STMicroelectronics 配置: 晶體管極性:PNP 集電極—基極電壓 VCBO: 集電極—發(fā)射極最大電壓 VCEO:- 40 V 發(fā)射極 - 基極電壓 VEBO:- 6 V 集電極—射極飽和電壓: 最大直流電集電極電流: 增益帶寬產(chǎn)品fT: 直流集電極/Base Gain hfe Min:100 A 最大工作溫度: 安裝風(fēng)格:SMD/SMT 封裝 / 箱體:PowerFLAT 2 x 2 |
| 2N5632 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 100V 10A 3PIN TO-3 - Bulk 制造商:Motorola Inc 功能描述: 制造商:Harris Corporation 功能描述: |
| 2N5633 | 制造商:Microsemi Corporation 功能描述:TRANS GP BJT NPN 120V 10A 3PIN TO-3 - Bulk |
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