參數(shù)資料
型號: 2N6075
廠商: ON SEMICONDUCTOR
元件分類: 晶閘管
英文描述: 4 Ampere RMS Silicon Bidirectional Thyristor(4A(均方根值),600V,硅雙向晶閘管)
中文描述: 600 V, 4 A, TRIAC, TO-225AA
文件頁數(shù): 2/8頁
文件大?。?/td> 73K
代理商: 2N6075
2N6071A/B Series
http://onsemi.com
2
MAXIMUM RATINGS
(T
J
= 25
°
C unless otherwise noted)
Rating
Symbol
Value
Unit
*Peak Repetitive Off-State Voltage (Note 1)
(T
J
=
40 to 110
°
C, Sine Wave, 50 to 60 Hz, Gate Open)
2N6071A,B
2N6073A,B
2N6075A,B
V
DRM,
V
RRM
200
400
600
V
*On-State RMS Current (T
C
= 85
°
C) Full Cycle Sine Wave 50 to 60 Hz
I
T(RMS)
4.0
A
*Peak Nonrepetitive Surge Current (One Full cycle, 60 Hz, T
J
= +110
°
C)
I
TSM
I
2
t
30
A
Circuit Fusing Considerations (t = 8.3 ms)
3.7
A
2
s
*Peak Gate Power (Pulse Width
1.0 s, T
C
= 85
°
C)
P
GM
10
W
*Average Gate Power (t = 8.3 ms, T
C
= 85
°
C)
P
G(AV)
0.5
W
*Peak Gate Voltage (Pulse Width
1.0 s, T
C
= 85
°
C)
V
GM
5.0
V
*Operating Junction Temperature Range
T
J
40 to +110
°
C
*Storage Temperature Range
T
stg
40 to +150
°
C
Mounting Torque (6-32 Screw) (Note 2)
8.0
in. lb.
Maximum ratings are those values beyond which device damage can occur. Maximum ratings applied to the device are individual stress limit
values (not normal operating conditions) and are not valid simultaneously. If these limits are exceeded, device functional operation is not implied,
damage may occur and reliability may be affected.
1. V
DRM
and V
RRM
for all types can be applied on a continuous basis. Blocking voltages shall not be tested with a constant current source such
that the voltage ratings of the devices are exceeded.
2. Torque rating applies with use of a compression washer. Mounting torque in excess of 6 in. lb. does not appreciably lower case-to-sink thermal
resistance. Main terminal 2 and heatsink contact pad are common.
THERMAL CHARACTERISTICS
Characteristic
Symbol
Max
Unit
*Thermal Resistance, JunctiontoCase
R
JC
3.5
°
C/W
Thermal Resistance, JunctiontoAmbient
R
JA
75
°
C/W
Maximum Lead Temperature for Soldering Purposes 1/8
from Case for 10 Seconds
T
L
260
°
C
*Indicates JEDEC Registered Data.
ORDERING INFORMATION
Device
Package
Shipping
2N6071A
TO225
500 Units / Box
2N6071B
TO225
500 Units / Box
2N6071BG
TO225
(PbFree)
500 Units / Box
2N6071BT
TO225
50 Units / Rail
2N6073A
TO225
500 Units / Box
2N6073B
TO225
500 Units / Box
2N6075A
TO225
500 Units / Box
2N6075B
TO225
500 Units / Box
For information on tape and reel specifications, including part orientation and tape sizes, please refer to our Tape and Reel Packaging
Specifications Brochure, BRD8011/D.
相關PDF資料
PDF描述
2N6077 Bipolar NPN Device in a Hermetically sealed TO66 Metal Package
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2N6097 TRANSISTOR | BJT | PNP | 18V V(BR)CEO | 6A I(C) | SOT-123VAR
2N6098 TRANSISTOR | BJT | NPN | 60V V(BR)CEO | 10A I(C) | TO-220AA
2N60B 600V N-Channel MOSFET
相關代理商/技術參數(shù)
參數(shù)描述
2N6075A 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
2N6075A 制造商:ON Semiconductor 功能描述:TRIAC 4A 600V TO-126
2N6075AG 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
2N6075B 功能描述:雙向可控硅 THY 4A 600V TRIAC RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB
2N6075BG 功能描述:雙向可控硅 Sensitive Gate RoHS:否 制造商:STMicroelectronics 開啟狀態(tài) RMS 電流 (It RMS):16 A 不重復通態(tài)電流:120 A 額定重復關閉狀態(tài)電壓 VDRM:600 V 關閉狀態(tài)漏泄電流(在 VDRM IDRM 下):5 uA 開啟狀態(tài)電壓: 保持電流(Ih 最大值):45 mA 柵觸發(fā)電壓 (Vgt):1.3 V 柵觸發(fā)電流 (Igt):1.75 mA 最大工作溫度: 安裝風格:Through Hole 封裝 / 箱體:TO-220AB