參數(shù)資料
型號: 2N7002
廠商: FAIRCHILD SEMICONDUCTOR CORP
元件分類: 小信號晶體管
英文描述: N-Channel Enhancement Mode Field Effect Transistor(N溝道增強型場效應管)
中文描述: 115 mA, 60 V, N-CHANNEL, Si, SMALL SIGNAL, MOSFET, TO-236AB
封裝: SOT-23, 3 PIN
文件頁數(shù): 3/14頁
文件大?。?/td> 538K
代理商: 2N7002
Electrical Characteristics
T
A
= 25
o
C unless otherwise noted
Symbol
Parameter
Conditions
Typ
e
Min
Typ
Max
Units
ON CHARACTERISTICS
Continued
(Note 1)
I
D(ON)
On-State Drain Current
V
GS
= 4.5 V, V
DS
= 10 V
V
GS
= 10 V, V
DS
> 2 V
DS(on)
V
GS
= 10 V, V
DS
> 2 V
DS(on)
V
DS
= 10 V, I
D
= 200 mA
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
V
DS
> 2 V
DS(on)
, I
D
= 200 mA
2N7000
75
600
mA
2N7002
500
2700
NDS7002A
500
2700
g
FS
Forward Transconductance
2N7000
100
320
mS
2N7002
80
320
NDS7002A
80
320
DYNAMIC CHARACTERISTICS
C
iss
C
oss
C
rss
t
on
Input Capacitance
V
= 25 V, V
GS
= 0 V,
f = 1.0 MHz
All
20
50
pF
Output Capacitance
All
11
25
pF
Reverse Transfer Capacitance
All
4
5
pF
Turn-On Time
V
= 15 V, R
L
= 25
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
V
= 30 V, R
L
= 150
,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
V
= 15 V, R
L
= 25
,
I
D
= 500 mA, V
GS
= 10 V,
R
GEN
= 25
V
= 30 V, R
L
= 150
,
I
D
= 200 mA, V
GS
= 10 V,
R
GEN
= 25
2N7000
10
ns
2N700
NDS7002A
20
t
off
Turn-Off Time
2N7000
10
ns
2N700
NDS7002
A
20
DRAIN-SOURCE DIODE CHARACTERISTICS AND MAXIMUM RATINGS
I
S
Maximum Continuous Drain-Source Diode Forward Current
2N7002
115
mA
NDS7002A
280
I
SM
Maximum Pulsed Drain-Source Diode Forward Current
2N7002
0.8
A
NDS7002A
1.5
1.5
V
SD
Drain-Source Diode Forward
Voltage
V
GS
= 0 V, I
S
= 115 mA
(Note 1)
V
GS
= 0 V, I
S
= 400 mA
(Note 1)
2N7002
0.88
V
NDS7002
A
0.88
1.2
Note:
1. Pulse Test: Pulse Width < 300μs, Duty Cycle < 2.0%.
2N7000.SAM Rev. A1
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