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參數(shù)資料
| 型號(hào)： | 934056333115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 12/20頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | 934056333115 |
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2001 Apr 25
2
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
FEATURES
Two low noise gain controlled amplifiers in a single
package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance
ratio.
APPLICATIONS
Gain controlled low noise amplifiers for VHF and UHF
applications with 3 to 9 V supply voltage, such as digital
and analog television tuners and professional
communications equipment.
DESCRIPTION
The BF1203 is a combination of two different dual gate
MOS-FET amplifiers with shared source and gate 2 leads.
The source and substrate are interconnected.
Internal bias circuits enable DC stabilization and a very
good cross-modulation performance during AGC.
Integrated diodes between the gates and source protect
against excessive input voltage surges. The transistor is
encapsulated in a SOT363 micro-miniature plastic
package.
PINNING - SOT363
PIN
DESCRIPTION
1
gate 1 (a)
2
gate 2
3
drain (a)
4
drain (b)
5
source
6
gate 1 (b)
handbook, halfpage
MBL254
Top view
13
2
4
5
6
AMP
a
AMP
b
d (a)
s
d (b)
g1 (a)
g2
g1 (b)
Fig.1 Simplified outline and symbol.
Marking code: L2-
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
Per MOS-FET unless otherwise specied
VDS
drain-source voltage
10
V
ID
drain current (DC)
30
mA
y
fs
forward transfer admittance
amp. a: ID = 15 mA
232835mS
amp. b: ID = 12 mA
253040mS
Cig1-s
input capacitance at gate 1
amp. a: ID = 15 mA; f = 1 MHz
2.6
3.1
pF
amp. b: ID = 12 mA; f = 1 MHz
1.7
2.2
pF
Crss
reverse transfer capacitance
f = 1 MHz
15
fF
NF
noise gure
amp. a: f = 400 MHz; ID =15mA
1
1.8
dB
amp. b: f = 800 MHz; ID =12mA
1.1
1.8
dB
Xmod
cross-modulation
amp. a: input level for k = 1% at 40 dB AGC
105
dB
V
amp. b: input level for k = 1% at 40 dB AGC
100
105
dB
V
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling. For further information, refer to Philips specs.: SNW-EQ-608, SNW-FQ-302A and SNW-FQ-302B.
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