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參數(shù)資料
| 型號(hào)： | 934056333115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號(hào)晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁(yè)數(shù)： | 5/20頁(yè) |
| 文件大?。?/td> | 158K |
| 代理商： | 934056333115 |
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2001 Apr 25
13
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
handbook, halfpage
050
20
0
4
8
12
16
10
20
30
40
IG1 (A)
ID
(mA)
MCD956
Fig.23 Drain current as a function of gate 1 current;
typical values.
Amplifier b
VDS = 5 V; VG2-S =4V.
Tj =25 °C.
handbook, halfpage
0
VGG (V)
15
16
12
4
0
8
23
4
MCD957
ID
(mA)
Fig.24 Drain current as a function of gate 1 supply
voltage (= VGG); typical values.
Amplifier b
VDS = 5 V; VG2-S = 4 V; Tj =25 °C.
RG1 = 120 k (connected to VGG); see Fig.35.
handbook, halfpage
024
6
VGG = VDS (V)
ID
(mA)
20
0
16
12
8
4
MCD958
RG1 = 68 k
82 k
100 k
120 k
150 k
220 k
180 k
Fig.25 Drain current as a function of gate 1 (= VGG)
and drain supply voltage; typical values.
Amplifier b
VG2-S = 4 V; Tj =25 °C.
RG1 connected to VGG; see Fig.35.
handbook, halfpage
02
46
16
12
4
0
8
MCD959
VG2-S (V)
ID
(mA)
4.5 V
4 V
3 V
VGG = 5 V
3.5 V
Amplifier b
VDS = 5 V; Tj =25 °C.
RG1 = 120 k (connected to VGG); see Fig.35.
Fig.26 Drain current as a function of gate 2
voltage; typical values.
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