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參數(shù)資料
| 型號： | 934056333115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 15/20頁 |
| 文件大?。?/td> | 158K |
| 代理商： | 934056333115 |
2001 Apr 25
4
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
STATIC CHARACTERISTICS
Tj =25 °C unless otherwise specied.
Note
1. RG1 connects gate 1 to VGG =5V.
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
Per MOS-FET unless otherwise specied
V(BR)DSS
drain-source breakdown voltage
VG1-S =VG2-S = 0; ID =10 A10
V
V(BR)G1-SS
gate-source breakdown voltage
VGS =VDS = 0; IG1-S =10mA
6
10
V
V(BR)G2-SS
gate-source breakdown voltage
VGS =VDS = 0; IG2-S =10mA
6
10
V
V(F)S-G1
forward source-gate voltage
VG2-S =VDS = 0; IS-G1 = 10 mA
0.5
1.5
V
V(F)S-G2
forward source-gate voltage
VG1-S =VDS = 0; IS-G2 = 10 mA
0.5
1.5
V
VG1-S(th)
gate-source threshold voltage
VDS =5V; VG2-S =4V; ID = 100 A
0.3
1
V
VG2-S(th)
gate-source threshold voltage
VDS =5V; VG1-S =4V; ID = 100 A
0.3
1.2
V
IDSX
drain-source current
amp. a:
VG2-S =4V; VDS =5V; RG =62k; note 1
11
19
mA
amp. b:
VG2-S =4V; VDS =5V; RG = 120 k; note 1
816
mA
IG1-S
gate cut-off current
VG1-S =5V; VG2-S =VDS =0
50
nA
IG2-S
gate cut-off current
VG2-S =5V; VG1-S =VDS =0
20
nA
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