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參數(shù)資料
| 型號： | 934056333115 |
| 廠商： | NXP SEMICONDUCTORS |
| 元件分類： | 小信號晶體管 |
| 英文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封裝： | PLASTIC, SMD, UMT6, SC-88, 6 PIN |
| 文件頁數(shù)： | 20/20頁 |
| 文件大?。?/td> | 158K |
| 代理商： | 934056333115 |
2001 Apr 25
9
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
handbook, halfpage
MGT588
102
10
1
101
10
102
103
f (MHz)
yis
(mS)
bis
gis
Fig.15 Input admittance as a function of frequency;
typical values.
Amplifier a
VDS = 5 V; VG2 =4V.
ID = 15 mA; Tamb =25 °C.
handbook, halfpage
MGT589
103
102
10
1
10
102
103
f (MHz)
102
10
1
rs
(deg)
103
|yrs|
(
S)
rs
|yrs|
Fig.16 Reverse transfer admittance and phase as
a function of frequency; typical values.
Amplifier a
VDS = 5 V; VG2 =4V.
ID = 15 mA; Tamb =25 °C.
handbook, halfpage
MGT590
102
10
1
102
10
1
10
102
103
f (MHz)
|yfs|
(mS)
fs
(deg)
fs
|yfs|
Fig.17 Forward transfer admittance and phase as
a function of frequency; typical values.
Amplifier a
VDS = 5 V; VG2 =4V.
ID = 15 mA; Tamb =25 °C.
handbook, halfpage
MGT591
10
1
101
102
10
102
103
f (MHz)
yos
(mS)
bos
gos
Fig.18 Output admittance as a function of
frequency; typical values.
Amplifier a
VDS = 5 V; VG2 =4V.
ID = 15 mA; Tamb =25 °C.
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