參數(shù)資料
型號: 934056333115
廠商: NXP SEMICONDUCTORS
元件分類: 小信號晶體管
英文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封裝: PLASTIC, SMD, UMT6, SC-88, 6 PIN
文件頁數(shù): 4/20頁
文件大?。?/td> 158K
代理商: 934056333115
2001 Apr 25
12
Philips Semiconductors
Product specication
Dual N-channel dual gate MOS-FET
BF1203
handbook, halfpage
02
20
0
4
8
12
16
0.4
0.8
1.2
1.6
VG1-S (V)
ID
(mA)
MCD952
VG2-S = 4 V
2.5 V
3.5 V
3 V
2 V
1.5 V
1 V
Fig.19 Transfer characteristics; typical values.
Amplifier b
VDS =5V.
Tj =25 °C.
handbook, halfpage
010
24
0
8
16
2
VDS (V)
ID
(mA)
6
48
MCD953
VG1-S = 1.5 V
1.4 V
1.2 V
1.3 V
1.1 V
1 V
0.9 V
Fig.20 Output characteristics; typical values.
Amplifier b
VG2-S =4V.
Tj =25 °C.
handbook, halfpage
0
2.5
100
0
20
40
60
80
0.5
1
1.5
2
VG1-S (V)
IG1
(
A)
MCD954
VG2-S = 4 V
3.5 V
3 V
2.5 V
2 V
1.5 V
1 V
Fig.21 Gate 1 current as a function of gate 1
voltage; typical values.
VDS =5V.
Tj =25 °C.
Amplifier b
VDS =5V.
Tj =25 °C.
handbook, halfpage
0
ID (mA)
420
40
30
10
0
20
812
16
MCD955
yfs
(mS)
3.5 V
2.5 V
3 V
2 V
VG2-S = 4 V
Fig.22 Forward transfer admittance as a function
of drain current; typical values.
Amplifier b
VDS =5V.
Tj =25 °C.
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